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MAXIMUM RATINGS All Ratings: TC 25°C unless otherwise specified

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Niveau: Supérieur, Doctorat, Bac+8
05 0- 71 57 R ev A 4 -2 00 4 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT30M17JLL 300V 135A 0.017? G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - SO T-2 27 G S S D ISOTOP® UL Recognized • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • Popular SOT-227 Package Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7 ® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7 R MOSFET Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 67.5A) Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID =

  • source voltage

  • body diode

  • drain current

  • gate voltage

  • diode forward

  • switching energy

  • lower miller

  • current


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APT30M17JLL
300V135A0.017

R POWER MOS 7 MOSFET
Power MOS 7
®

is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS.
®
Both conduction and switching
losses are addressed with Power MOS 7 by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7
®

combines lower conduction and switching losses
®
"UL Recognized"
along with exceptionally fast switching speeds inherent with APT's
ISOTOP
patented metal gate structure.
D•Lower Input Capacitance•Increased Power Dissipation
•Lower Miller Capacitance•Easier To Drive
G
•Lower Gate Charge, Qg•Popular SOT-227 Package
S
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
SymbolParameterAPT30M17JLLUNIT
V
DSS
Drain-Source Voltage
300
Volts
I
D
Continuous Drain Current @ T
C
= 25°C
135
Amps
I
DM
Pulsed Drain Current
1
540
V
GS
Gate-Source Voltage Continuous
±30
Volts
V
GSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ T
C
= 25°C
694
Watts
PDLinear Derating Factor
5.56
W/°C
T
J
,T
STG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature: 0.063" from Case for 10 Sec.
300
I
AR
Avalanche Current
1
(Repetitive and Non-Repetitive)
135
Amps
E
AR
Repetitive Avalanche Energy
1
50
mJ
E
AS
Single Pulse Avalanche Energy
4
3600
STATIC ELECTRICAL CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
BV
DSS
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
300
Volts
R
DS(on)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 67.5A)
0.017
Ohms
IZero Gate Voltage Drain Current (V
DS
= 300V, V
GS
= 0V)
100
µA
DSS
Zero Gate Voltage Drain Current (V
DS
= 240V, V
GS
= 0V, T
C
= 125°C)
500
I
GSS
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
35
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICSAPT30M17JLL
SymbolCharacteristicTest ConditionsMINTYPMAXUNIT
C
iss
Input Capacitance
V

= 0V
14100
SGC
oss
Output Capacitance
V
DS

= 25V
3285
pF
C
rss
Reverse Transfer Capacitance
f

= 1 MHz
185
Q
g
Total Gate Charge
3V
GS

= 10V
230
Q
gs
Gate-Source Charge
V
DD

= 150V
85
nC
I
D

= 135A

@ 25°C
Q
gd
Gate-Drain ("Miller") Charge
105
tTurn-on Delay Time
RESISTIVE SWITCHING
19
d(on)V
GS

=

15V
t
r
Rise Time
V
DD

=

150V
31
t
d(off)
Turn-off Delay Time
I
D

=

135A

@ 25°C
44ns
R

=

0.6

t
f
Fall Time
G
13
INDUCTIVE SWITCHING @ 25°C
E
on
Turn-on Switching Energy
6V

=

200V, V= 15V
1120
SGDDE
off
Turn-off Switching Energy
I
D

=

135A, R
G

=

5

1250
INDUCTIVE SWITCHING @ 125°C
µ
J
E
on
Turn-on Switching Energy
6V

=

200V, V= 15V
1325
SGDDE
off
Turn-off Switching Energy
I
D

=

135A, R
G

=

5

1460
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
I
S
Continuous Source Current (Body Diode)
135
spmAI
SM
Pulsed Source Current
1
(Body Diode)
540
V
SD
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
135A
)
1.3
Volts
t
rr
Reverse Recovery Time (I
S
= -I
D
135A
, dl
S
/dt = 100A/µs)
620
ns
Q
rr
Reverse Recovery Charge (I
S
= -I
D
135A
, dl
S
/dt = 100A/µs)
14
µC
dv
/
dt
Peak Diode Recovery
dv
/
dt 5
5
V/ns
THERMAL CHARACTERISTICS
SymbolCharacteristicMINTYPMAXUNIT
R
θ
JC
Junction to Case
0.18
W/C°R
θ
JA
Junction to Ambient
40
1Repetitive Rating: Pulse width limited by maximum junction4Starting T
j

=

+25°C, L = 0.40mH, R
G

=

25

, Peak I
L
= 135A
temperature5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
2Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%device itself.
IS


-
ID
135A
di
/
dt


700A/µs

VR


300V

TJ


150
°
C
3See MIL-STD-750 Method 34716 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
02.00.160.9
7.021.05.00.08Note:
t13.00.04
t2
t0.1SINGLE PULSE
Duty Factor D = 1/t2
0.05
Peak TJ = PDM x Z
θ
JC + TC
010
-5
10
-4
10
-3
10
-2
10
-1
1.010
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

Typical Performance Curves
RC MODEL
tJeumncpt.i (o
°
nC)
0.02680.0456F
rewoP(watts)0.1090.765F
0.042623.5F
Case temperature. (
°
C)
FIGURE 2,

TRANSIENT

THERMAL

IMPEDANCE

MODEL
004VDS2>5 I0Dµ S(OENC). xP URLDSSE (TOENS)MTAX.
350
@ <0.5 % DUTY CYCLE
003052002TJ = -55°C
051TJ = +25°C
001TJ = +125°C
0500246810
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4,

TRANSFER CHARACTERISTICS
041021001080604020255075100125150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
I
D
= 67.5A
V
GS
= 10V
0.25.10.15.00.0-50-250255075100125150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

APT30M17JLL
053VGS =15 & 10V
003V80522007.5V
051V7001V5.605V6V5.50051015202530
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW

VOLTAGE

OUTPUT CHARACTERISTICS
04.1VNO=R M10AVL I Z@E D 6T7.O5A
SG03.102.101.1VGS=10V
00.1VGS=20V
09.00.80050100150200250300
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
02.151.101.150.100.159.00.90-50-250255075100125150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.11.10.19.08.07.00.6-50-250255075100125150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

540
LIOMIPTEERDA BTIYO RN HE (ROEN)
SD00105TTJC ==++12550°°CC
10SINGLE PULSE
110100300
V, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIG
D
U
S
RE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 100A
VDS= 60V
21VDS= 150VVDS= 240V
84

Sµ001Sm1Sm01

0050100150200
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
052002t
d(off)
V
DD
= 200V
150
R
G
= 5

T
J
= 125°C
L = 100µH
00105t
d(on)
0406080100120
)A( IFIGURE 14, DELAY
D
TIMES vs CURRENT
00510021900E
on
Effo600
V
DD
= 200V
R
G
= 5

300
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
0405060708090100110120
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT

APT30M17JLL
CssiCsso

30,000
10,000
000,1Cssr10001020304050
V, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11
D
,
S

CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
004100TJ =+150°C
TJ =+25°C

01

10.30.50.70.91.11.31.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13,

SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
V
DD
= 200V
R
G
= 5

t
80
T
J
= 125°C
f
L = 100µH
0604tr020406080100120
)A(IFIGURE 15, RISE AND
D
F

ALL TIMES vs CURRENT
6,000
V
DD
= 200V
I
D
= 50A
5,000
T
J
= 125°C
L = 100µH
E
ON
includes
E
off
4,000
diode reverse recovery.
000,32,000E
no000,1005R10, GA1T5E R20ESI2S5TA3N0CE 3(5Oh4m0s)4550
GFIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves
%01Gate Voltage
T
J
125°C
t
d(on)
t
r
90%Drain Current
5%10%5%
Drain Voltage
Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions

VDD

VICEC

APT30DF60

GD.U.T.

Figure 20, Inductive Switching Test Circuit

APT30M17JLL
%09Gate Voltage
T
J
125°C
t
d(off)
t
f
Drain Voltage
%09%010Drain Current
Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

SOT-227 (ISOTOP
®
) Package Outline
1121..28 ((..448603))
3311..75 ((11..224480))8.9 (.350)
7.8 (.307)W=4.1 (.161)9.6 (.378)
8.2 (.322)WH==44..83 ((..118679)) H(e4 xp lNaucte sM)4
(

4 Hpl=a4c.9e s(). 1 93)
r = 4.0 (.157)2255..24 ((10..090902))
(2 places) 44..20 ((..116557))00..8755 ((..003330))1122..86 ((..540946))
(2 places)

33..36 ((..114239))21..1945 ((..008747))
1154..19 ((..559847))
* Source Drain
30.1 (1.185)
30.3 (1.193)*iSntoeurrncaell tye. rCmuirnraelns t ahrae nsdhlionrgted
38.0 (1.496)cSaopuarbcieli ttye rism ienqalu.al for either
38.2 (1.504)
* Source Gate
Dimensions in Millimeters and (Inches)
ISOTOP
®

is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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