Modelling and fabrication of high performance Schottky barrier SOI-MOSFETs with low effective Schottky barriers [Elektronische Ressource] / Forschungszentrum Jülich in der Helmholtz-Gemeinschaft, Institute of Bio- and Nanosystems. Min Zhang

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Informations

• Publié par: rheinisch-westfalischen_technischen_hochschule_-rwth-_aachen
• Publié le: 01 janvier 2006
• Nombre de lectures: 17
• Langue: English
• Poids de l'ouvrage: 5 Mo

Extrait

Forschungszentrum Jülich
in der Helmholtz-Gemeinschaft
Institute of Bio- and Nanosystems
Modelling and fabrication of high performance
Schottky-barrier SOI-MOSFETs with low
effective Schottky-barriers
Min Zhang
Jül-4235
Dezember 2006
ISSN 0944-2952
Jül-4235 Min Zhang Label-free dectection of biomolecules
Jül-4235Berichte des Forschungszentrums Jülich 4235
Modelling and fabrication of high performance
Schottky-barrier SOI-MOSFETs with low
effective Schottky-barriers
Min ZhangBerichte des Forschungszentrums Jülich ; 4235
ISSN 0944-2952
Institute of Bio- and Nanosystems
D 82 (Diss., RWTH Aachen, 2006)
Zu beziehen durch: Forschungszentrum Jülich GmbH, • Zentralbibliothek, Verlag
D-52425 Jülich • Bundesrepublik Deutschland
in 02461/61-5220 • Telefax: 02461/61-6103 • e-mail: [e-mail]
1 Introduction 1
2 Principles of SB-MOSFETs 4
2.1 The SB-MOSFET 4
2.2 The MOS-capacitor 6
2.3 Schottky diodes 9
2.4 Schottky diode current 11
2.5 Operating principles of SB-MOSFETs 13
2.6 I-V characteristics of SB-MOSFET devices 15
2.6.1 Long-channel SB-MOSFET 15
2.6.2 Short-channel SB-MOSFET 18
2.6.3 SB-MOSFESTs on bulk versus on SOI 20
3 Silicide in SB-MOSFET 22
3.1 Silicidation of NiSi 23
3.1.1 NiSi films on Si(100) 25
3.1.2 NiSi films on SOI(100) 26
3.2 Silicidation induced dopant segregation 28
3.3 Lateral silicidation of NiSi on SOI 30
4 Modelling of SB-MOSFET operation 33
4.1 Model of device simulation 33
4.2 Simulation results 34
4.2.1 A 30nm device 34
4.2.2 Gate oxide thickness 37
4.2.3 Silicon body thickness 39
4.2.4 Dopant segregation 39
4.3 Results and discussion 42
5 Schottky diodes 44
445.1 Fabrication of Schottky diodes