BTA04 T D S A BTB04 T D S A

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Niveau: Secondaire, Lycée, Terminale
BTA04 T/D/S/A BTB04 T/D/S/A March 1995 SENSITIVE GATE TRIACS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360° conduction angle) BTA Tc = 90°C 4 A BTB Tc = 95°C ITSM Non repetitive surge peak on-state current ( Tj initial = 25°C ) tp = 8.3 ms 42 A tp = 10 ms 40 I2t I2t value tp = 10 ms 8 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/µs Repetitive F = 50 Hz 10 A/µs Non Repetitive 50 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 110 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO220AB (Plastic) A1 A2 G .VERY LOW IGT = 10mA max . LOW IH = 15mA max .BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION Symbol Parameter BTA / BTB04- Unit 400 T/D/S/A 600 T/D/S/A 700 T/D/S/A VDRM VRRM Repetitive peak off-state voltage Tj = 110°C 400 600 700 V ABSOLUTE RATINGS (limiting values) FEATURES The BTA/BTB04 T/D/S

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BTA04 T/D/S/A BTB04 T/D/S/A
SENSITIVE GATE TRIACS
FEATURES VERY LOW I= 10mA max GT LOW I= 15mA max H . BTA Family : INSULATING VOLTAGE = 2500V (RMS) (UL RECOGNIZED : E81734)
Tstg Tj Tl
Storage and operating junction temperature range
1/5
Unit A
- 40 to+ 150 - 40 to+ 110 260
Maximum lead temperature for solderingduring 10 s at4.5 mm from case
Non Repetitive
2 A s A/ms
°C °C °C
400 T/D/S/A 400
Unit 700 T/D/S/A 700 V
March 1995
V Repetitivepeak off-state voltage DRM V Tj= 110°C RRM
DESCRIPTION A1 A2 The BTA/BTB04 T/D/S/Atriac family are high per-G formance glass passivated PNPN devices. These parts are suitables for general purpose ap-TO220AB plications where gate high sensitivity is required. (Plastic) Application on 4Q such as phase control and static switching. ABSOLUTE RATINGS(limiting values) Symbol ParameterValue I RMSon-state currentBTA Tc= 90°C 4 T(RMS) (360°conduction angle) BTB Tc= 95°C I Nonrepetitive surge peak on-state currenttp = 8.3 ms42 TSM ( Tjinitial = 25°C ) tp = 10 ms40 2 2 I tI tvalue tp= 10 ms8 dI/dt Criticalrate ofrise of on-state currentRepetitive 10 Gate supply : I= 50mAdi /dt= 0.1A/ms F= 50 Hz G G
Symbol
50
A
Parameter
BTA / BTB04-600 T/D/S/A 600