IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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Description

Niveau: Secondaire, Lycée, Terminale
IRG4PH30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE E G n-ch an ne l C VCES = 1200V VCE(on) typ. = 3.10V @VGE = 15V, IC = 10A PD- 91579A TO-247AC Short Circuit Rated UltraFast IGBT Parameter Max. Units VCES Collector-to-Emitter Voltage 1200 V IC @ TC = 25°C Continuous Collector Current 20 IC @ TC = 100°C Continuous Collector Current 10 ICM Pulsed Collector Current 40 A ILM Clamped Inductive Load Current 40 IF @ TC = 100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current 40 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) Parameter Min. Typ. Max. Units R?JC Junction-to-Case - IGBT ––– ––– 1.2 R?JC Junction-to-Case - Diode ––– ––– 2.5 °C/W R?CS Case-to-Sink, flat, greased surface ––– 0.24 ––– R?JA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g

• irgph30md2 products 


• time —


• circuit withstand


• switching loss


• typical switching


• tsc short


• recovery diode


• diode


• gate resistance

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 21
• Langue: English

Extrait

PD 91579A IRG4PH30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •High short circuit rating optimized for motor control,  t =10µs, V = 720V , T = 125°C, sc CC J  V GE = 15V • Combines low conduction losses with high G  switching speed •Tighter parameter distribution and higher efficiency E  than previous generations TM n c h a n n e l •IGBT copackaged with HEXFRED ultrafast,  ultrasoft recovery antiparallel diodes Benefits •Latest generation 4 IGBT's offer highest power density  motor controls possible TM •optimized for performance with IGBTs.HEXFRED diodes  Minimized recovery characteristics reduce noise, EMI and  switching losses •This part replaces IRGPH30MD2 products • For hints see design tip 97003

Absolute Maximum Ratings Parameter V CES CollectortoEmitter Voltage I C @ T C Continuous Collector Current= 25°C I C @ T C = 100°C Continuous Collector Current I CM Pulsed Collector CurrentQ I LM Clamped Inductive Load CurrentR I F @ T C Diode Continuous Forward Current= 100°C I FM Diode Maximum Forward Current t Short Circuit Withstand Time sc V GE GatetoEmitter Voltage P D @ T C = 25°C Maximum Power Dissipation P D @ T C = 100°C Maximum Power Dissipation T J Operating Junction and T STG Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 632 or M3 Screw. Thermal Resistance Parameter R θJC JunctiontoCase  IGBT R θJC JunctiontoCase  Diode R θCS CasetoSink, flat, greased surface R θJA JunctiontoAmbient, typical socket mount Wt Weight www.irf.com

Short Circuit Rated UltraFast IGBT

V CES = 1200V

V CE(on) typ. =3.10V

@V GE = 15V, I C = 10A

TO247AC

Max. 1200 20 10 40 40 10 40 10 ± 20 100 42 55 to +150

300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m)

Min. ––– ––– ––– ––– –––

Typ. ––– ––– 0.24 ––– 6 (0.21)

Max. 1.2 2.5 ––– 40 –––

Units V

A

µs V

W

°C

Units

°C/W

g (oz) 1 2/7/2000