Parameter Max Units VCES Collector to Emitter Voltage V IC TC 25°C Continuous Collector Current IC TC 100°C Continuous Collector Current ICM Pulsed Collector Current A ILM Clamped Inductive Load Current IF TC 100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current tsc Short Circuit Withstand Time s VGE Gate to Emitter Voltage V PD TC 25°C Maximum Power Dissipation PD TC 100°C Maximum Power Dissipation TJ Operating Junction and to TSTG Storage Temperature Range °C

Description

Niveau: Secondaire, Lycée, Terminale
Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 28 IC @ TC = 100°C Continuous Collector Current 16 ICM Pulsed Collector Current 58 A ILM Clamped Inductive Load Current 58 IF @ TC = 100°C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 58 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) IRG4PC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE E G n-ch an ne l C VCES = 600V VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A Short Circuit Rated UltraFast IGBT 4/15/2000 PD -91587A TO-247AC Parameter Min. Typ. Max. Units R?JC Junction-to-Case - IGBT ––– ––– 1.2 R?JC Junction-to-Case - Diode ––– ––– 2.5 °C/W R?CS Case-to-Sink, flat, greased surface ––– 0.24 ––– R?JA Junction-to-Ambient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21

• gate charge


• time —


• circuit withstand


• switching speed 


• switching loss


• typical switching


• tsc short


• recovery diode


• diode

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 20
• Langue: English

Extrait

PD 91587A

IRG4PC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • High short circuit rating optimized for motor control, V CES = 600V  t =10µs, @360V V (start), T = 125°C, sc CE J  V GE = 15V V CE(on) typ. =2.21V • Combines low conduction losses with high G  switching speed • Tighter parameter distribution and higher efficiency @V GE = 15V, I C = 16A E  than previous generations TM n c h a n n e l • IGBT copackaged with HEXFRED ultrafast,  ultrasoft recovery antiparallel diodes Benefits • Latest generation 4 IGBTs offer highest power density  motor controls possible TM • HEXFRED diodes optimized for performance with IGBTs.  Minimized recovery characteristics reduce noise, EMI and  switching losses • This part replaces the IRGBC30KD2 and IRGBC30MD2  products • For hints see design tip 97003 TO247AC Absolute Maximum Ratings Parameter Max. Units V CES 600 VCollectortoEmitter Voltage I C @ T C Continuous Collector Current 28= 25°C I C @ T C = 100°C Continuous Collector Current 16 I CM Pulsed Collector CurrentQ58 A I LM Clamped Inductive Load CurrentR58 I F @ T C 12Diode Continuous Forward Current = 100°C I FM Diode Maximum Forward Current 58 t Short Circuit Withstand Time 10 µs sc V GE ± 20 GatetoEmitter Voltage V P D @ T C Maximum Power Dissipation 100= 25°C W P D @ T C 42Maximum Power Dissipation = 100°C T J 55 to Operating Junction and +150 T STG °CStorage Temperature Range Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 632 or M3 Screw. 10 lbf•in (1.1 N•m) Thermal Resistance UnitsTyp. Max. Parameter Min. R JC 1.2JunctiontoCase  IGBT ––– ––– R JC ––– ––– JunctiontoCase  Diode 2.5 °C/W R CS –––––– 0.24 CasetoSink, flat, greased surface R JA JunctiontoAmbient, typical socket mount ––– ––– 40 Wt Weight ––– 6 (0.21) ––– g (oz) www.irf.com 1 4/15/2000