TELEFUNKEN Semiconductors Rev A2 Sep

Description

TSOP17.. TELEFUNKEN Semiconductors Rev. A2, 24-Sep-96 1 (6) Photo Modules for PCM Remote Control Systems Available types for different carrier frequencies Type f0 Type f0 TSOP1730 30 kHz TSOP1733 33 kHz TSOP1736 36 kHz TSOP1737 36.7 kHz TSOP1738 38 kHz TSOP1740 40 kHz TSOP1756 56 kHz Description The TSOP17.. – series are miniaturized receivers for in- frared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter. The demodulated output signal can directly be decoded by a microprocessor. The main benefit is the reliable function even in disturbed ambient and the protection against uncontrolled output pulses. 94 8691 GND VS OUT Features Photo detector and preamplifier in one package Output active low Internal filter for PCM frequency High immunity against ambient light Improved shielding against electric field disturbance 5 Volt supply voltage, low power consumption TTL and CMOS compatibility Continuous transmission possible (tpi/T0.4) Block Diagram 94 8136 PIN Input AGC Control Circuit Band Pass Demodu- lator 100 k 1 2 3 VS OUT GND

• dc supply


• control circuit


• protection against uncontrolled


• khz


• output signal


• electric field


• against ambient


• temperature range


• ambient temperature

Sujets

• Electric field
• Temperature range
• Room temperature

Informations

• Publié par: pefav
• Nombre de lectures: 17
• Langue: English

Extrait

TSOP17..
Photo Modules for PCM Remote Control Systems

Available types for different carrier frequencies
Type f Type f0 0
TSOP1730 30 kHz TSOP1733 33 kHz
TSOP1736 36 kHz TSOP1737 36.7 kHz
TSOP1738 38 kHz TSOP1740 40 kHz
TSOP1756 56 kHz
Description
The TSOP17.. – series are miniaturized receivers for in-
frared remote control systems. PIN diode and GND
VSpreamplifier are assembled on lead frame, the epoxy OUT
package is designed as IR filter.
94 8691
The demodulated output signal can directly be decoded
by a microprocessor. The main benefit is the reliable
function even in disturbed ambient and the protection
against uncontrolled output pulses.
Features
Photo detector and preamplifier in one package Improved shielding against electric field
disturbanceOutput active low
5 Volt supply voltage, low power consumptionInternal filter for PCM frequency
TTL and CMOS compatibilityHigh immunity against ambient light
Continuous transmission possible (t /T 0.4)pi
Block Diagram
2
VS
ControlInput
Circuit
100 k
3
OUT
PIN
Band Demodu-
AGC
Pass lator
1
GND
94 8136
TELEFUNKEN Semiconductors 1 (6)
Rev. A2, 24-Sep-96
TSOP17..
Absolute Maximum Ratings
T = 25 Camb
Parameter Test Conditions Symbol Value Unit
Supply Voltage (Pin 2) V –0.3...6.0 VS
Supply Current (Pin 2) I 5 mAS
Output Voltage (Pin 3) V –0.3...6.0 VO
Output Current (Pin 3) I 5 mAO
Junction Temperature T 100 Cj
Storage Temperature Range T –25...+85 Cstg
Operating TRange T Camb
Power Consumption (T 85 C) P 50 mWamb tot
Soldering Temperature t 10 s, 1 mm from case T 260 Csd
Basic Characteristics
T = 25 Camb
Parameter Test Conditions Symbol Min Typ Max Unit
Supply Current (Pin 2)pp y ( ) V = 5 V, E = 0 I 0.4 0.6 0.8 mAS v SD
V = 5 V, E = 40 klx, sunlight I 1.0 mAS v SH
Transmission Distance E = 0, test signal see fig.7, d 35 mv
IR diode TSIP5201, I = 400 mAF
2Output Voltage Low (Pin 3) I = 0.5 mA,E = 0.7 mW/m , V 250 mVOSL e OSL
f = f , t /T = 0.4o p
2Irradiance (30 – 40 kHz) Pulse width tolerance: E 0.35 0.5 mW/me min
t – 5/f < t < t + 6/f , pi o po pi o
test signal (see fig.7)
2Irradiance (56 kHz)E 0.4 0.6 mW/me min
t – 5/f < t < t + 6/f , pi o po pi o
2Irradiance E 30 W/me max
Directivity Angle of half transmission distance ±45 deg1/2
Application Circuit
330 *) +5V **)
2
4.7 F *)TSOP17.. >10 k
optional
TSUS 5... C
3TSIP 5...
1
96 12108 GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5V<V <5.5VS
2 (6) TELEFUNKEN Semiconductors
Rev. A2, 24-Sep-96
jTSOP17..
Typical Characteristics (T = 25 C unless otherwise specified)amb
1.0
2.0
0.8 f(E)=f0
1.6
0.6
1.2
0.4
0.8
0.2
0.4f = f 5%0
f ( 3 dB ) = f /100
0.0 0.0
1.3 2.00.7 0.8 0.9 1.0 1.1 1.2 0.0 0.4 0.8 1.2 1.6
94 8143 f/f – Relative Frequency 94 8147 E – Field Strength of Disturbance ( kV /m )0
Figure 1. Frequency Dependence of Responsivity Figure 4. Sensitivity vs. Electric Field Disturbances
101.0
0.9 f = f0
0.8 1 kHz
Input burst duration0.7
0.6
10 kHz
0.5 1
= 950 nm,
0.4 optical test signal, fig.7
0.3
0.2 100 Hz
0.1
0 0.1
10000.1 1.0 10.0 100.0 1000.0 10000.0 0.01 0.1 1 10 100
2
96 12110 E – Irradiance ( mW/m )e 94 9106 V AC Voltage on DC Supply Voltage ( mV )sRMS –
Figure 2. Sensitivity in Dark Ambient Figure 5. Sensitivity vs. Supply Voltage Disturbances
5.0 1.0
Correlation with ambient light sources
4.5 0.9
( Disturbance effect ) :1 0W/m2 1.4 klx Sensitivity in dark ambient
4.0 0.8( Stand.illum.A,T= 2855 K ) 8.2 klx
( Daylight, T = 5900 K )3.5 0.7
3.0 0.6
2.5 0.5
2.0 0.4
Ambient, = 950 nm
1.5 0.3
1.0 0.2
0.5 0.1
0 0
0.01 0.10 1.00 10.00 100.00 –30 –15 0 15 30 45 60 75 90
296 12111 E – DC Irradiance (W/m ) 96 12112 T – Ambient Temperature ( °C )amb
Figure 3. Sensitivity in Bright Ambient Figure 6. Sensitivity vs. Ambient Temperature
TELEFUNKEN Semiconductors 3 (6)
Rev. A2, 24-Sep-96

2
E – Threshold Irradiance (mW/m ) t – Output Pulse Length (ms) E / E – Rel. Responsitivity ( % )
e min po e min e
2 2
2
E – Threshold Irradiance ( mW/m ) E – Threshold Irradiance ( mW/m )
E – Threshold Irradiance (mW/m )
e min e min e minTSOP17..
Optical Test Signal
Ee ( IR diode TSIP 5201, I = 0.4 A, 30 pulses, f = f , T = 10 ms ) 1.0F 0
0.9
0.8
Ton
0.7t
0.6t *pi
0.5
T
Toff0.4* t 10/fo is recommended for optimal functionpi
0.3
Output Signal = 950 nm, 96 12109 0.2
VO optical test signal, fig.8
0.11 ) 7/f < t < 15/f0 d 0VOH 2 )
t = t 6/f 0po pi 0
0.1 1.0 10.0 100.0 1000.0 10000.0
VOL
296 12114 E – Irradiance (mW/m )et
1 )t d 2 )t po
Figure 7. Output Function Figure 10. Output Pulse Diagram
Optical Test Signal
Ee 1.0
0.9
V = 5 Vs
0.8
0.7t
600 s 600 s
0.6
0.5T = 60 ms
0.4
94 8134
0.3
Output Signal, ( see Fig.10 )
0.2VO
0.1
VOH
0
–30 –15 0 15 30 45 60 75 90VOL
t 96 12115 T – Ambient Temperature ( °C )ambT Ton off
Figure 8. Output Function Figure 11. Supply Current vs. Ambient Temperature
3.0 1.2
N=16 1.02.5
pulses per burst
0.82.0
1.5 0.6
1.0 0.4
N=320.5 0.2
0 0
11500 0.1 0.2 0.3 0.4 0.5 0.6 0.7 750 850 950 1050
96 12113 t /T – Duty Cyclep 94 8408 – Wavelength ( nm )
Figure 9. Sensitivity vs. Duty Cycle Figure 12. Relative Spectral Sensitivity vs. Wavelength
4 (6) TELEFUNKEN Semiconductors
Rev. A2, 24-Sep-96

2
E – Threshold Irradiance (mW/m )
e min
S ( ) – Relative Spectral Sensitivity
I – Supply Current ( mA ) T ,T – Output Pulse Length (ms)
rel s on offTSOP17..
1.0 1.0
0.9 0.9
0.8 0.8
0.7 0.7
0.6 0.6
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
–90–75–60–45–30–15 0 15 30 45 60 75 90 –90–75–60–45–30–15 0 15 30 45 60 75 90
95 11339 Angle (deg) 95 11340 Angle (deg)
Figure 13. Vertical Directivity Figure 14. Horizontal Directivity y x
Dimensions in mm
96 12116
TELEFUNKEN Semiconductors 5 (6)
Rev. A2, 24-Sep-96
jj
Relative Transmission distance
Relative Transmission distanceTSOP17..
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: [phone], Fax number: 49 (0)7131 67 2423
6 (6) TELEFUNKEN Semiconductors
Rev. A2, 24-Sep-96