HCC4011B 12B 23B HCF4011B 12B 23B

Stmicroelectronics

Description

Niveau: Supérieur, Master, Bac+4
HCC4011B/12B/23B HCF4011B/12B/23B NAND GATES DESCRIPTION .PROPAGATION DELAY TIME = 60ns (typ.) AT CL = 50pF, VDD = 10V .BUFFERED INPUTS AND OUTPUTS .QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE . INPUT CURRENT OF 100nA AT 18V AND 25°C FOR HCC DEVICE .100% TESTED FOR QUIESCENT CURRENT .5V, 10V AND 15V PARAMETRIC RATINGS .MEETS ALL REQUIREMENTS OF JEDECTEN- TATIVE STANDARD No. 13A, ”STANDARD SPECIFICATIONS FOR DESCRIPTION OF ”B” SERIES CMOS DEVICES” QUAD 2 INPUT HCC/HCF 4011B DUAL 4 INPUT HCC/HCF 4012B TRIPLE 3 INPUT HCC/HCF 4023B June 1989 The HCC4011B, HCC4012B and HCC4023B (ex- tended temperature range) and HCF4011B, HCF4012B and HCF4023B (intermediate tempera- ture range) are monolithic, integrated circuit, avail- able in 14-lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF4011B, HCC/HCF4012B and HCC/HCF4023B NAND gates provide the system designer with direct implementation of the NAND function and supplement the existing family of COS/MOS gates. All inputs and outputs are buf- fered. PIN CONNECTIONS EY (Plastic Package) F (Ceramic Frit Seal Package) M1 (Micro Package) C1 (Plastic Chip Carrier) ORDER CODES : HCC40XXBF HCF40XXBM1 HCF40XXBEY HCF40XXBC1 4011B 4012B 4023B 1/12

• parameter value


• input hcc


• conditions symbol


• current hcctypes


• operating temperature


• output drive


• quiescent current

Sujets

• Operating temperature
• Biasing

Informations

• Publié par: larec
• Nombre de lectures: 23
• Langue: Deutsch

Extrait

QUAD2INPUTHCC/HCF4011B T D R U I A P L LE 4 3 IN I P N U P T UT HC H C C / C H / C H F CF 40 4 1 0 2 2 B 3B. PROPAGATIONDELAYTIME=60ns(typ.)AT C B L U = FF 5 E 0p R F E , D V I D N D P = U 1 T 0 S V ANDOUTPUTS . F Q O UI R E H S C C C EN D T EV C I U C R E RENTSPECIFIEDTO20V . I F N O P R UT HC C C UR D R E E VI N C T E OF100nAAT18VAND25 ° C 5 10 V, 0 1 % 0 T V E A S N T D E 1 D 5 F V O P R A Q RA UI M E E S T C R E IC NT R C A U TI R N R G E S NT . MEETSALLREQUIREMENTSOFJEDECTEN- S TA P T E I C V I E FIC S A T T A I N O D N A S R F D OR N D o . ES 13 C A R , IP º T S I T O A N N O D F A º R B D º SERIESCMOSDEVICESº H H C C C F4 4 0 0 1 1 1 1 B B / / 1 1 2 2 B B / / 2 2 3 3 B B NANDGATES FYE (PlasticPackage)(CeramicFritSealPackage) 1M1C (MicroPackage)(PlasticChipCarrier) ORDERCODES: H H C C F C 4 4 0 0 X X X X B B E F YH H C C F F 4 4 0 0 X X X X B B C M 1 1 DESCRIPTION TheHCC4011B,HCC4012BandHCC4023B(ex-TheHCC/HCF4011B,HCC/HCF4012Band t H e C nd F e 4 d 012 t B em an p d er H at C ur F e 402 ra 3 n B g (i e n ) ter a m n e d diat H e C t F e 4 m 0 p 1 e 1 ra B - , d H e C si C g / n H e C r F w 4 it 0 h 23 d B ire N ct A i N m D pl g e a m te e s nt p a r ti o o v n ide of t t h h e e s N ys A te N m D t a u b r l e e ra in ng 1 e) 4- a le re ad mo d n u o a l l ith i i n c - , li i n n e teg p r l a a t s e ti d c ci o r r cui c t, er a a v m ai i l c -f C u O nc S t / io M n OS an g d at s e u s. pp A l l e l m in e p n u t ts th a e nd ex o is u t t i p n u g ts fa ar m e ily bu o f- f packageandplasticmicropackage.fered. PINCONNECTIONS B1104 June1989 B2104B3204 21/1

HCC/HFC4011B/12B/23B ABSOLUTEMAXIMUMRATINGS SymbolParameterValueUnit V DD *SupplyVoltage:HCCTypes±0.5to+20V HCFTypes±0.5to+18V V i InputVoltage±0.5toV DD +0.5V I I DCInputCurrent(anyoneinput) ± 10mA P tot TotalPowerDissipation(perpackage)200mW DissipationperOutputTransistor forT op =FullPackage-temperatureRange100mW T op OperatingTemperature:HCCTypes±55to+125 ° C HCFTypes±40to+85 ° C T stg StorageTemperature±65to+150 ° C StressesabovethoselistedunderºAbsoluteMaximumRatingsºmaycausepermanentdamagetothedevice.Thisisastressratingonlyand functionaloperationofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperationalsectionsofthisspecificationisnotimplied. Exposuretoabsolutemaximumratingconditionsforexternalperiodsmayaffectdevicereliability. *AllvoltagevaluesarereferredtoV SS pinvoltage. RECOMMENDEDOPERATINGCONDITIONS SymbolParameter V DD SupplyVoltage:HCCTypes HCFTypes V I InputVoltage T op OperatingTemperature:HCCTypes HCFTypes 21/2 eulaV 81ot3 51ot3 0toV DD ± ± 5 4 5 0 t t o o + + 1 8 2 5 5 inUt V V V C ° C °

SCHEMATIC B1104 B2104 204B3 NADCIGOLDIAGRAMS HCC/HCF4011B/12B/23B 21/3

HCC/HFC4011B/12B/23B STATICELECTRICALCHARACTERISTICS(overrecommendedoperatingconditions) TestConditionsValue SymbolParameter V I V O |I O |V DD T Low *25 ° CT High * Unit (V)(V)( m A)(V) Min.Max.Min.Typ.Max.Min.Max. I L Quiescent0/550.250.010.257.5 Current HCC 0/10100.50.010.515 Types 0/151510.01130 0/202050.025150 m A HCF 0/5510.0117.5 Types 0/101020.01215 0/151540.01430 V OH V O o u l t t p ag ut e High0/5<154.954.954.95 0/10<1109.959.959.95 V 0/15<11514.9514.9514.95 V OL OutputLow5/0<150.050.050.05 Voltage 10/0<1100.050.050.05 V 15/0<1150.050.050.05 V IH InputHigh0.5/4.5<153.53.53.5 Voltage 1/9<110777 V 1.5/13.5<115111111 V IL InputLow4.5/0.5<151.51.51.5 Voltage 9/1<110333 V 13.5/1.5<115444 I OH Output0/52.55±2±1.6±3.2±1.15 Drive HCC 0/54.65±0.64±0.51±1±0.36 Current Types 0/109.510±1.6±1.3±2.6±0.9 0/1513.515±4.2±3.4±6.8±2.4 mA 0/52.55±1.53±1.36±3.2±1.1 HCF 0/54.65±0.52±0.44±1±0.36 Types 0/109.510±1.3±1.1±2.6±0.9 0/1513.515±3.6±3.0±6.8±2.4 I OL Output0/50.450.640.5110.36 C Si u n r k rent T H y C p C es 0/100.5101.61.32.60.9 0/151.5154.23.46.82.4 mA 0/50.450.520.4410.36 T H y C p F es 0/100.5101.31.12.60.9 0/151.5153.63.06.82.4 5± I IH ,I IL I L n e p a u k t ageT H y C p C es 0/1818 ± 0.1 ± 10 ± 0.1 ± 1 Current HCF0/15 AnyInput 15 ± 0.3 ± 10 ±5 ± 0.3 ± 1 m A sepyT C I InputCapacitanceAnyInput57.5pF *T LOW =±55 ° CforHCCdevice:±40 ° CforHCFdevice. *T T H h IG e H N = oi + se 12 M 5 a ° r C gi f n o f r o H r C bo C th d º e 1 v º ic a e n : d + º0 8 º 5 ° le C v f e o l r is H : C 1 F V d m e i v n i . ce w . ithV DD =5V,2Vmin.withV DD =10V,2.5VwithV DD =15V. 21/4

HCC/HCF4011B/12B/23B DYNAMICELECTRICALCHARACTERISTICS(T=25 ° C,C=50pF,R=200k W , typicaltemperaturecoefficientforallV DD valuesis0.3 a % m / b ° C,allinput L riseandfal L ltimes=20ns) SymbolParameter TestConditions Value V DD (V)Min.Typ.Max. t PLH ,t PHL PropagationDelayTime5125250 1060120 154590 5100200 1050100 154080 t THL ,t TLH TransitionTime TESTCIRCUITS QuiescentDeviceCurrent. InputLeakageCurrent. NoiseImmunity. tinU sn sn 521/

HCC/HFC4011B/12B/23B MinimumOutputHigh(source)CurrentCharac- teristics. TypicalOutputHigh(source)CurrentCharac- teristics. TypicalPropagationDelayTimeperGateasa FunctionofLoadCapacitance. /621 MinimumOutputLow(sink)CurrentCharac- teristics. TypicalOutputLow(sink)CurrentCharacteristics. TypicalTransitionTimevs.LoadCapacitance.

TypicalVoltageTransferCharacteristics.TypicalrewoP HCC/HCF4011B/12B/ Dissipation/gatesvFrequency. 32B 21/7

HCC/HFC4011B/12B/23B /821 .MID 1a B b 1b D E e 3e F I L Z .NIM 15.0 93.1 172. PlasticDIP14MECHANICALDATA mm .PYT 5.0 52.0 5.8 45.2 42.51 3.3 .XAM 56.1 02 1.7 1.5 245. .NIM 0020. 550.0 50.00 hcni .PYT 020.0 010.0 533.0 001.0 006.0 031.0 .XAM 560.0 787.0 082.0 102.0 001.0 A100P

.MID A B D E 3e F G H L M N P Q .NIM 83.0 92.2 4.0 71.1 .022 25.1 78. HCC/HCF4011B/12B/23B CeramicDIP14/1MECHANICALDATA mm .PYT 3.3 42.51 .XAM 02 0.7 97.2 55.0 25.1 13.0 45.2 3.01 50.8 80.5 .NIM 510.0 90.00 610.0 640.0 900.0 060.0 703.0 hcni .PYT 031.0 006.0 .XAM 787.0 672.0 011.0 220.0 060.0 210.0 001.0 604.0 713.0 002.0 C350P 21/9

HCC/HFC4011B/12B/23B /0121 .MID A 1a 2a b 1b C 1c D E e 3e F G L M S .NIM 1.0 53.0 91.0 55.8 8.5 8.3 6.4 5.0 SO14MECHANICALDATA mm .PYT 5.0 .172 26.7 MAX.MIN. 57.1 0.20.003 56.1 0.460.013 0.250.007 45 ° (typ.) 8.750.336 6.20.228 4.00.149 5.30.181 1.270.019 86.0 8 ° (max.) hcni .PYT 910.0 050.0 003.0 .XAM 860.0 700.0 460.0 810.0 010.0 443.0 442.0 751.0 802.0 050.0 620.0 G310P

.MID A B D 1d 2d E e 3e F G M 1M .NIM 987. 98.8 2.4 73.7 PLCC20MECHANICALDATA mm .PYT 45.2 65.0 72.1 80.5 83.0 .172 41.1 .XAM 30.01 40.9 75.4 83.8 101.0 .NIM 583.0 053.0 .0561 092.0 HCC/HCF4011B/12B/23B hcni .PYT 001.0 220.0 050.0 002.0 510.0 050.0 540.0 .XAM 593.0 653.0 081.0 3.003 400.0 PA720 21/11