HCC4073B 81B 82B HCF4073B 81B 82B
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HCC4073B 81B 82B HCF4073B 81B 82B

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Description

Niveau: Supérieur, Master, Bac+4
HCC4073B/81B/82B HCF4073B/81B/82B June 1989 AND GATES DESCRIPTION .MEDIUM SPEED OPERATION – tPLH = 85ns (typ.) ; tPHL = 65ns (typ.) AT 10V .QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE .5V, 10V, AND 15V PARAMETRIC RATINGS . INPUT CURRENT OF 100nA AT 18V AND 25°C FOR HCC DEVICE .100% TESTED FOR QUIESCENT CURRENT .MEETS ALL REQUIREMENTS OF JEDECTEN- TATIVESTANDARDN°13A, ”STANDARD SPE- CIFICATIONS FOR DESCRIPTION OF ”B” SERIES CMOS DEVICES” The HCC4073B, HCC4081B and HCC4082B (ex- tended temperature range) and the HCF4073B, HCF4081B and HCF4082B (intermediate tempera- ture range) are monolithic integrated circuits avail- 4073B TRIPLE 3–INPUT AND GATE 4081B QUAD 2–INPUT AND GATE 4082B DUAL 4–INPUT AND GATE EY (Plastic Package) F (Ceramic Frit Seal Package) M1 (Micro Package) C1 (Plastic Chip Carrier) ORDER CODES : HCC40XXBF HCF40XXBM1 HCF40XXBEY HCF40XXBC1 able in 14-lead dual in-line plastic or ceramic pack- age and plastic micro package. The HCC/HCF4073B, 4081B and 4082B AND gates provide the system designer with direct im- CONNECTION DIAGRAM 4073B 4081B 4082B 1/10

  • micro package

  • value

  • symbol parameter

  • typical output

  • quiescent current

  • any input


Sujets

Informations

Publié par
Nombre de lectures 30
Langue Deutsch
4073B TRI PLE 3±I NPUT AND G ATE 4081B QUAD 2±I NPUT AND G ATE 4082B DUAL 4±I NPUT AND G ATE MEDIUM SPEED OPERATION ± tPLH= 85ns (typ.) ; tPHL= 65ns (typ.) AT 10V QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE 5V, 10V, AND 15V PARAMETRIC RATINGS INPUT CURRENT OF 100nA AT 18V AND 25°C FOR HCC DEVICE 100% TESTED FOR QUIESCENT CURRENT .TATIVE STANDARD N°13A, ºSTANDARD SPE-MEETS ALL REQUIREMENTS OF JEDEC TEN-CIFICATIONS FOR DESCRIPTION OF ºBº SERIES CMOS DEVICESº
DESCRI PTION TheHCC4073B,HCC4081BandHCC4082B(ex-tended temperature range) and theHCF4073B, HCF4081BandHCF4082B(intermediate tempera-ture range) are monolithic integrated circuits avail-
CONNECTIO N DIAG RAM
June 1989
4073B
HCC4073B/81B/82B HCF4073B/81B/82B
EY (Plastic Package)
AND GATES
F (Ceramic Frit Seal Package)
M1 C1 (Micro Package) (Plastic Chip Carrier) ORDER CODES : HCC40XXBF HCF40XXBM1 HCF40XXBEY HCF40XXBC1
able in 14-lead dual in-line plastic or ceramic pack-age and plastic micro package. TheHCC/HCF4073B,4081Band4082BAND gates provide the system designer with direct im-
4081B
4082B
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H CC /H C F4073B /4081B /4082B
ABSOLUTE MAXI MUM RATINGS
Symbol Parameter Valu e Unit VDDVoltage :* Supply HC CTypes ± V0.5 to + 20 H C FTypes ± 0.5 to + 18 V ViInput Voltage ± 0.5 to VDDV+ 0.5 IIDC Input Current (any one input)±10 mA Pt o tTotal Power Dissipation (per package) 200 mW Dissipation per Output Transistor for To p= Full Package-temperature mWRange 100 To pOperating Temperature :HCCTypes ± 55 to + 125°C H CFTypes ± 40 to + 85°C Ts t gStorage Temperature ± 65 to + 150°C Stresses above those listed under ºAbsolute Maximum Ratingsº may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-tions of this specifi cation is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliabil ity. * All voltage values are referred to VSSpin voltage.
RECOMMENDED OPERATI NG CO NDI TI O NS
Symbol V DD
VI To p
STATIC
Parameter Supply Voltage :HC CTypes H CFTypes Input Voltage Operating Temperature :HCCTypes H CFTypes
ELECTRICAL
Valu e 3 to 18 3 to 15 0 to VDD ± 55 to + 125 ± 40 to + 85
CHARACTERISTICS(over recommended operating conditions)
Unit V V V °C °C
Test Conditions Valu e Symbol Paramet er Unit VIVO|IO| VD DTL o w* 25°C TH i g h* (V) (V) (mA) (V) Min. Max. Min. Typ. Max. Min . Max. ILQuiescent 0/ 0.25 7.55 5 0.25 0.01 Current 0/10 10 0.5 0.01 0.5 15 HCC Types 0/15 15 1 0.01 1 30 0/20 20 5 0.02 5 150mA 0/ 5 5 1 0.01 1 7.5 HCF 0/10 10 2 0.01 2 15 Types 0/15 15 4 0.01 4 30 VO H4.95 4.955 4.95 < 1 0/ 5 Output High Voltage 0/10 < 1 10 9.95 9.95 9.95 V 0/15 < 1 15 14.95 14.95 14.95 VO LOutput Low 1 5 5/0 < 0.050.05 0.05 Voltage 10/0 < 1 10 0.05 0.05 0.05 V 15/0 < 1 15 0.05 0.05 0.05 * TLow= ± 55°C forHCCdevice : ± 40°C forHCFdevice. * THig h= + 125°C forHCCdevice : + 85°C forHCFdevice. The Noise Margin for both º1º and º0º level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
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STATIC
ELECTRICAL
CHARACTERISTICS(continued)
H C C/HC F4073B /4081B/4082B
Test Conditions Valu e Symbol Paramet er Unit V V |I | V T * 25°*C T I O O D D L o w H i g h (V) (V) (mA) (V) Min. Max. Min. Typ. Max. Min . Max. VIH3.5 3.5 3.50.5/4.5 < 1 5 Input High Voltage 1/9 < 1 10 7 7 7 V 1.5/13.5 < 1 15 11 11 11 VIL1.5 1.5 1.51 5 4.5/0.5 < Input Low Voltage 9/1 < 1 10 3 3 3 V 13.5/1.5 < 1 15 4 4 4 IO H1.6 ± 2 ± 1.153.2 ± Output 0/ 5 ± 5 2.5 Drive 0/ 5 4.6 5 ± 0.64 ± 0.51 ± 1 ± 0.36 HCC Current Types 0/10 9.5 10 ± 1.6 ± 1.3 ± 2.6 ± 0.9 0/15 13.5 15 ± 4.2 ± 3.4 ± 6.8 ± 2.4 mA 0/ 5 2.5 5 ± 1.53 ± 1.36 ± 3.2 ± 1.1 0/ 5 4.6 5 ± 0.52 ± 0.44 ± 1 ± 0.36 HCF Types 0/10 9.5 10 ± 1.3 ± 1.1 ± 2.6 ± 0.9 0/15 13.5 15 ± 3.6 ± 3.0 ± 6.8 ± 2.4 IO L0.51 1 0.36Output 0/ 5 0.4 5 0.64 HCC Sink 0/10 0.5 10 1.6 1.3 2.6 0.9 Types Current 0/15 1.5 15 4.2 3.4 6.8 2.4 mA 0/ 5 0.4 5 0.52 0.44 1 0.36 HCF 0/10 0.5 10 1.3 1.1 2.6 0.9 Types 0/15 1.5 15 3.6 3.0 6.8 2.4 IIH, IILInput HCC± 5 0/18 18±0.1±10±0.1±1 Leakage Types Any InputmA Current HCF ± 5 0/15 15±0.3±10±0.3±1 Types CIpF5 7.5 Any Input Input Capacitance * TLow= ± 55°C forHCC± 40device : °C forHCFdevice. * THig h= + 125°C forHCCdevice : + 85°C forHCFdevice. The Noise Margin for both º1º and º0º level is : 1V min. with VDD= 5V, 2V min. with VDD= 10V, 2.5V min. with VDD= 15V.
DYNAMIC ELECTRICAL CHARACTERISTICS(Tamb= 25°C, CL= 50pF, typical temperature coefficient for all VD Dvalues is 0.3%/°C, all input rise and fall times = 20ns, RL= 200kW) Test Conditions Val ue Symbol Paramet er V(V)Min. Typ. Max. D D t , t Propagation Delay Time 5 125 250 P H L P L H 10 60 125 15 45 90 tT L H, tT HLTransition Time 5 100 200 10 50 100 15 40 80
Unit
ns
ns
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H CC /H C F4073B /4081B /4082B
Typical Voltage and Current Transfer Charac-teristics.
Minimum Output Low (sink) Current Charac-teristics.
Minimum Output High (source) Current Charac-teristics.
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Typical Output Low (sink) Current .
Typical Output teristics.
High
(source) Current
Charac-
Typical Propagation Delay Time vs. Load Capacit-ance.
Typical Transition Time vs. Load Capacitance.
TEST CIRCUI TS Quiescent Device Current.
Input Leakage Current.
H C C/HC F4073B /4081B/4082B
Typical Dynamic Power Dissipation per Gate vs. Frequency.
Input Voltage.
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0.020
1.65
2.54
1.27
L
Z
e3
F
E
e
b1
D
MAX.
0.065
0.130
H CC /H C F4073B /4081B /4082B
0.100
0.787
6/10
0.100
0.280
0.5
8.5
5.1
20
2.54
0.25
0.335
15.24
3.3
7.1
0.010
mm
inch
TYP.
MIN.
0.020
DIM.
a1
P001A
0.050
TYP.
Plastic DIP14 MECHANICAL DATA
1.39
B
b
MIN.
0.055
0.51
0.201
0.600
MAX.
I
0.100
0.110
0.787
P
0.060
0.012
0.022
0.307
0.317
0.406
Q
7.8
8.05
N
5.08
F
G
H
M
0.200
P053C
MAX.
0.276
Ceramic DIP14/1 MECHANICAL DATA
A
B
MIN.
e3
E
D
0.016
0.046
0.009
10.3
0.31
1.52
15.24
mm
TYP.
MAX.
0.130
7/10
H C C/HC F4073B /4081B/4082B
2.79
0.55
0.600
MIN.
2.54
3.3
7.0
0.22
20
DIM.
1.17
0.4
1.52
2.29
0.090
0.015
L
0.38
inch
TYP.
0.060
H CC /H C F4073B /4081B /4082B
8/10
DIM.
A a1 a2 b b1 C c1 D E e e3 F G L M S
MIN.
0.1
0.35 0.19
8.55 5.8
3.8 4.6 0.5
SO14 MECHANICAL DATA
mm TYP.
0.5
1.27 7.62
MAX. 1.75 0.2 1.65 0.46 0.25
MIN.
0.003
0.013 0.007
45°(typ.) 8.75 0.336 6.2 0.228
4.0 5.3 1.27 0.68 8°(max.)
0.149 0.181 0.019
inch TYP.
0.019
0.050 0.300
MAX. 0.068 0.007 0.064 0.018 0.010
0.344 0.244
0.157 0.208 0.050 0.026
P013G
0.045
MAX.
0.015
0.022
TYP.
mm
MAX.
0.004
0.330
0.180
M1
G
A
MIN.
D
B
d1
d2
M
e
E
0.050
0.395
0.050
e3
F
0.356
1.27
0.38
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P027A
1.14
0.56
TYP.
0.101
0.290
0.385
H C C/HC F4073B /4081B/4082B
MIN.
DIM.
7.37
10.03
9.04
inch
PLCC20 MECHANICAL DATA
0.165
0.350
0.200
5.08
0.100
8.38
1.27
4.2
9.78
8.89
2.54
4.57
H CC /H C F4073B /4081B /4082B
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
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