APT website http: www advancedpower com

Pdoumergue

Description

Niveau: Supérieur, Doctorat, Bac+8
APTM10TAM09FP A PT M 10 TA M 09 FP – R ev 0 S ep te m be r, 20 04 APT website – 1 – 6 W VBUS1 VBUS2 VBUS3 0/VBUS3 V G5 G6 S5 S6 0/VBUS1 S2 G2 G1 S1 0/VBUS2 U S3 S4 G3 G4 S5 G5 G6 S6 VBUS 2 0/VBUS 3 VBUS 3 0/VBUS 2 WV G4 S4 G3 S3 VBUS 1 0/VBUS 1 S1 G1 S2 G2 U Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 100 V Tc = 25°C 139 ID Continuous Drain Current Tc = 80°C 100 IDM Pulsed Drain current 430 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 9 m? PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 3000 mJ VDSS = 100V RDSon = 09m? max @ Tj = 25°C ID = 139A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS V® FREDFETs - Low RDSon -

• source voltage


• gate charge


• vgs


• drain current


• junction temperature


• operating area


• gate charge - fast intrinsic


• very low

Sujets

• Junction temperature

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 31
• Langue: English

Extrait

APTM10TAM09FP

V DSS = 100V Triple phase leg R DSon = 09mΩmax @ Tj = 25°C MOSFET Power Module I D = 139A @ Tc = 25°C Applicatio VBUS1 VBUS2 VBUS3 •Welding converters •Switched Mode Power Supplies •Uninterruptible Power Supplies G1 G3 G5 •Motor control S1 S3 S5 U V W Features ® •Power MOS VFREDFETs G2 G4 G6 -Low R DSon -Low input and Miller capacitance S2 S4 S6 -Low gate charge 0/VBUS1 0/VBUS20/VBUS3 -Fast intrinsic diode  -Avalanche energy rated  -Very rugged •n source for easy drive Kelvi •Very low stray inductance -Symmetrical design -Lead frames for power connections •High level of integration Benefits •Outstanding performance at high frequency operation •Direct mounting to heatsink (isolated package) VBUS 1VBUS 2VB US 3 •Low junction to case thermal resistance G1 G3 G5 •Solderable terminals both for power and signal for S1 S3 S5 0/VBUS 10/VBUS 20/VBUS 3 easy PCB mounting S2 S4 S6 •Very low (12mm) profile G2 G4 G6 •Each leg can be easily paralleled to achieve a phase leg of three times the current capability U VW •Module can be configured as a three phase bridge •Module can be configured as a boost followed by a full bridge Absolute maximumratings ymbol ParameterMax ratingsUnit V DSS - Source Breakdown Voltage100 V Drain T c = 25°C139 I D Drain Current Continuous A T c 100= 80°C I DM 430Drain current Pulsed V GS ±30 V Gate- Source Voltage R DSon 9 m- Source ON Resistance Drain Ω P D Power DissipationT Maximum c = 25°C390 W I AR  Avalanche100 Acurrent (repetitive and non repetitive) E AR Avalanche Energy Repetitive50 mJ E AS 3000 SinglePulse Avalanche Energy  TheseDevices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT websitehttp:/ www.advancedpower.com 1 6