APT website http: www advancedpower com

Pdoumergue

Description

Niveau: Supérieur, Doctorat, Bac+8
APT20M22JVRU3 A PT 20 M 22 JV RU 3 – R ev 0 O ct ob er , 2 00 4 APT website – 1 – 7 ISOTOP? Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. A S G D Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 200 V Tc = 25°C 97 ID Continuous Drain Current Tc = 80°C 72 IDM Pulsed Drain current 388 A VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 22 m? PD Maximum Power Dissipation Tc = 25°C 450 W IAR Avalanche current (repetitive and non repetitive) 97 A EAR Repetitive Avalanche Energy 50 EAS Single Pulse Avalanche Energy 2500 mJ IFAV Maximum Average Forward Current Duty cycle=0.5 Tc = 90°C 30 IFRMS RMS Forward Current (Square wave, 50% duty) 47 A VDSS = 200V RDSon = 22m? max @ Tj = 25°C ID = 97A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • ISOTOP® Package (SOT-227) • Very low stray inductance • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case

• vgs


• charge


• reverse recovery


• drain current


• irrm maximum


• vgs gate - source


• low rdson - low


• gate charge - fast intrinsic


• voltage vgs

Sujets

• Charge

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 91

Extrait

APT20M22JV U3 ® V DSS = 200V ISOTOP Buck chopper R DSon = 22mΩmax @ Tj = 25°C OSFET Power Module I D = 97A @ Tc = 25°C D Applicatio •AC and DC motor control •Switched Mode Power Supplies G Features S ® •MOSFETsPower MOS V -Low R DSon -Low input and Miller capacitance -Low gate charge -Fast intrinsic diode A -Avalanche energy rated -Very rugged ® •ISOTOP Package (SOT-227) •Very low stray inductance S •High level of integration Benefits D •Outstanding performance at high frequency operation •Direct mounting to heatsink (isolated package) •Low junction to case thermal resistance •Very rugged •Low profile  ISOTOP Absolute maximum ratings ymbol Parameter Max ratings Unit V DSS - Source Breakdown Voltage  Drain 200 V T c = 25°C 97 I D Drain Current Continuous T c 72 A = 80°C I DM  Pulsed Drain current 388 V GS - Source Voltage  Gate ±30 V R DSon  Drain 22 m- Source ON Resistance Ω P D TPower Dissipation  Maximum c = 25°C 450 W I AR current (repetitive and non repetitive) 97 A Avalanche E AR Avalanche Energy  Repetitive 50 mJ E AS 2500 Single Pulse Avalanche Energy IF A V 30Tc = 90°C Duty cycle=0.5 Average Forward Current  Maximum A IF RMS Forward Current (Square wave, 50% duty) 47 RMS  These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

APT website http:/ www.advancedpower.com

1 7