Features Floating channel designed for bootstrap operation

Default

Description

Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for all channels • Over-current shutdown turns off all six drivers • Independent half-bridge drivers • Matched propagation delay for all channels • 2.5V logic compatible • Outputs out of phase with inputs • Cross-conduction prevention logic Description The IR2130/IR2132(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels. Proprietary HVIC technology enables ruggedized monolithic construc- tion. Logic inputs are compatible with CMOS or LSTTL outputs, down to 2.5V logic. A ground-referenced operational amplifier provides analog feedback of bridge current via an external current sense resistor. A current trip function which terminates all six outputs is also derived from this resistor. An open drain FAULT signal indicates if an over-current or undervoltage shutdown has occurred. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. 3-PHASE BRIDGE DRIVER Product Summary VOFFSET 600V max. IO+/- 200 mA / 420 mA VOUT 10 - 20V ton/off (typ.) 675 & 425 ns Deadtime (typ.) 2.5 µs (IR2130) 0.8 µs (IR2132) Packages 28-Lead PDIP 28-Lead SOIC 44-Lead PLCC w/o 12 Leads Data Sheet No.

• operational amplifier


• vcc


• floating supply


• logic input


• ratings absolute


• output voltage


• absolute maximum


• current

Sujets

• Operational amplifier
• Current

Informations

• Publié par: pefav
• Nombre de lectures: 21
• Langue: English

Extrait

Data Sheet No. PD60019-O

IR2130/IR2132 (
J
)(
S
)
3-PHASE BRIDGE DRIVER
FeaturesProduct Summary

Floating channel designed for bootstrap operation
Fully operational to +600V
V
OFFSET
600V max.
Tolerant to negative transient voltage
dV/dt immune
I
O
+/-200 mA / 420 mA

Gate drive supply range from 10 to 20V

Undervoltage lockout for all channels
V
OUT
10 - 20V

Over-current shutdown turns off all six drivers

Independent half-bridge drivers
t
on/off
(typ.)675 & 425 ns

Matched propagation delay for all channels

2.5V logic compatible

Outputs out of phase with inputs
Deadtime (typ.)2.5 µs (IR2130)

Cross-conduction prevention logic
0.8 µs (IR2132)
Description
The IR2130/IR2132(J)(S) is a high voltage, high speed
Packages
power MOSFET and IGBT driver with three independent
high and low side referenced output channels. Proprietary
HVIC technology enables ruggedized monolithic construc-
tion. Logic inputs are compatible with CMOS or LSTTL
outputs, down to 2.5V logic. A ground-referenced
operational amplifier provides analog feedback of bridge
28-Lead SOIC
current via an external current sense resistor. A current
trip function which terminates all six outputs is also
28-Lead PDIP
derived from this resistor. An open drain
FAULT
signal
indicates if an over-current or undervoltage shutdown has
occurred. The output drivers feature a high pulse current
44-Lead PLCC w/o 12 Leads
buffer stage designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use at high frequencies. The floating channels can be used to drive
N-channel power MOSFETs or IGBTs in the high side configuration which operate up to 600 volts.
Typical Connection

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer
to our Application Notes and DesignTips for proper circuit board layout.

www.irf.com

1

IR2130/IR2132 (
J
)(
S
)

Absolute Maximum Ratings
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under board mounted and still air conditions.
S
A
0
dditional information is shown in Figures 50 through 53.
SymbolDefinitionMin.Max.Units
V
B1,2,3
High Side Floating Supply Voltage-0.3625
V
S1,2,3
High Side Floating Offset VoltageV
B1,2,3
- 25V
B1,2,3
+ 0.3
V
HO1,2,3
High Side Floating Output VoltageV
S1,2,3
- 0.3V
B1,2,3

+ 0.3
V
CC
Low Side and Logic Fixed Supply Voltage-0.325
V
SS
Logic GroundV
CC
- 25V
CC

+ 0.3
V
LO1,2,3
Low Side Output Voltage-0.3V
CC

+ 0.3
V
IN
Logic Input Voltage (
HIN1,2,3
,
LIN1,2,3
& ITRIP)V
SS
- 0.3(V
SS

+ 15) orV
w(Vhi
C
c
C
h

e+v 0e.r 3i)s
rewolV
FLT
FAULT
Output VoltageV
SS
- 0.3V
CC

+ 0.3
V
CAO
Operational Amplifier Output VoltageV
SS
- 0.3V
CC

+ 0.3
V
CA-
Operational Amplifier Inverting Input VoltageV
SS
- 0.3V
CC

+ 0.3
dV
S
/dtAllowable Offset Supply Voltage Transient50V/ns
P
D
Package Power Dissipation @ T
A


+25
°
C(28 Lead DIP)1.5
(28 Lead SOIC)1.6W
(44 Lead PLCC)2.0
Rth
JA
Thermal Resistance, Junction to Ambient(28 Lead DIP)83
(28 Lead SOIC)78
°
C/W
(44 Lead PLCC)63
T
J
Junction Temperature150
T
S
Storage Temperature-55150
°
C
T
L
Lead Temperature (Soldering, 10 seconds)300
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
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rating is tested
SymbolDefinitionMin.Max.Units
V
B1,2,3
High Side Floating Supply VoltageV
S1,2,3
+ 10V
S1,2,3
+ 20
V
S1,2,3
High Side Floating Offset VoltageNote 1600
V
HO1,2,3
High Side Floating Output VoltageV
S1,2,3
V
B1,2,3
V
CC
Low Side and Logic Fixed Supply Voltage1020
V
SS
Logic Ground-55
V
LO1,2,3
Low Side Output Voltage0V
CC
V
IN
Logic Input Voltage (
HIN1,2,3
,
LIN1,2,3
& ITRIP)V
SS
V
SS
+ 5V
V
FLT
FAULT

Output VoltageV
SS
V
CC
V
CAO
Operational Amplifier Output VoltageV
SS
V
SS
+ 5
V
CA-
Operational Amplifier Inverting Input VoltageV
SS
V
SS
+ 5
T
A
Ambient Temperature-40125
°
C
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f
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S
il
0
s )+. 600V). Logic state held for V
S
of (V
S0
- 5V) to (V
S0
- V
BS
).
Note 2: All input pins, CA- and CAO pins are internally clamped with a 5.2V zener diode.
2www.irf.com

IR2130/IR2132 (
J
)(
S
)
Dynamic Electrical Characteristics
Vel
B
e
I
c
A
tr
S
i c(aVl
C
c
C
h,a rVa
B
c
S
te
1,
ri
2
s
,
t
3
i)c s= a1r5eV d, eVfi
S
n
0
e
,1
d
,
i
2,
n
3


F=i gVu
S
re
S
s, 3C
L
t

h=r o1u0g0h0 5p.F and T
A
= 25
°
C unless otherwise specified. The dynamic
SymbolDefinitionFigureMin.Typ.Max.UnitsTest Conditions
t
on
Turn-On Propagation Delay11500675850
t
off
Turn-Off Propagation Delay12300425550V
IN

= 0 & 5V
t
r
Turn-On Rise Time1380125V
S1,2,3

= 0 to 600V
t
f
Turn-Off Fall Time143555
t
itrip
ITRIP to Output Shutdown Prop. Delay15400660920nsV
IN
, V
ITRIP

= 0 & 5V
t
bl
ITRIP Blanking Time400V
ITRIP

= 1V
t
flt
ITRIP to
FAULT

Indication Delay16335590845V
IN
, V
ITRIP

= 0 & 5V
t
flt,in
Input Filter Time (All Six Inputs)310V
IN

= 0 & 5V
t
fltclr
LIN1,2,3
to
FAULT

Clear Time176.09.012.0V
IN
, V
ITRIP

= 0 & 5V
DTDeadtime(IR2130)181.32.53.7
µ
sV
IN

= 0 & 5V
(IR2132)180.40.81.2
SR+Operational Amplifier Slew Rate (+)194.46.2V/
µ
s
SR-Operational Amplifier Slew Rate (-)202.43.2
NOTE: For high side PWM, HIN pulse width must be
1.5µ
sec
Static Electrical Characteristics
aVr
B
e
I

A
re
S
f e(rVe
C
n
C
c,e Vd
B
to
S

1
V
,2,3
) a=n 1d 5aVr,e Va
S
p
0
p
,
l
1
i
,
c
2
a
,3
b

l=e tVo
S
a
S
l l asnixd lTo
A
g i=c i2n5p
°
uCt luenaldess:s
H
ot
I
h
N
e
1
r
,
w
2
i
,
s
3
e &s p
L
e
I
c
N
ifi
1
e
,
d
2
.
,

3
T.h Te hVe
I

N
V, V
T
an
H
da Ind pI
I
a
N
r apmareatemresters
OOSSare referenced to V
S0,1,2,3
and are applicable to the respective output leads: HO1,2,3 or LO1,2,3.
SymbolDefinitionFigureMin.Typ.Max.UnitsTest Conditions
V
IH
Logic 0 Input Voltage (OUT = LO)212.2V
V
IL
Logic 1 Input Voltage (OUT = HI)220.8
V
IT,TH+
ITRIP Input Positive Going Threshold23400490580
V
OH
High Level Output Voltage, V
BIAS
- V
O
24100mVV
IN
= 0V, I
O
= 0A
V
OL
Low Level Output Voltage, V
O
25100V
IN
= 5V, I
O
= 0A