MAXIMUM RATINGS All Ratings: TC 25°C unless otherwise specified

Darelb

Description

Niveau: Supérieur, Doctorat, Bac+8
05 0- 70 21 R ev D 4 -2 00 4 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT20M20JLL 200V 104A 0.020? G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - SO T-2 27 G S S D ISOTOP® UL Recognized • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • Popular SOT-227 Package Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7 ® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7 R MOSFET Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 52A) Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID =

• source voltage


• body diode


• drain current


• gate voltage


• diode forward


• switching energy


• lower miller


• current

Sujets

• Transfer
• Thomson
• Threshold voltage
• Current

Informations

• Publié par: profil-zyak-2012
• Nombre de lectures: 9
• Langue: English

Extrait

APT20M20JLL
200V104A0.020
Ω
R POWER MOS 7 MOSFET
Power MOS 7
®

is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®losses are addressed w
®
ith Power MOS 7 by significantly lowering R
DS(ON)
and Q
g
. Power MOS 7

combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
ISOTOP
®
"UL Recognized"
patented metal gate structure.
D•Lower Input Capacitance•Increased Power Dissipation
•Lower Miller Capacitance•Easier To Drive
G
•Lower Gate Charge, Qg•Popular SOT-227 Package
SMAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
SymbolParameterAPT20M20JLLUNIT
V
DSS
Drain-Source Voltage
200
Volts
I
D
Continuous Drain Current @ T
C
= 25°C
104
Amps
I
DM
Pulsed Drain Current
1
416
V
GS
Gate-Source Voltage Continuous
±30
Volts
V
GSM
Gate-Source Voltage Transient
±40
PTotal Power Dissipation @ T
C
= 25°C
463
Watts
DLinear Derating Factor
3.70
W/°C
T
J
,T
STG
Operating and Storage Junction Temperature Range
-55 to 150
C°T
L
Lead Temperature: 0.063" from Case for 10 Sec.
300
I
AR
Avalanche Current
1
(Repetitive and Non-Repetitive)
100
Amps
E
AR
Repetitive Avalanche Energy
1
50
JmE
AS
Single Pulse Avalanche Energy
4
2500
STATIC ELECTRICAL CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
BV
DSS
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
200
Volts
R
DS(on)
Drain-Source On-State Resistance
2
(V
GS
= 10V, I
D
= 52A)
0.020
Ohms
Zero Gate Voltage Drain Current (V
DS
= 200V, V
GS
= 0V)
100
I
DSS
µA
Zero Gate Voltage Drain Current (V
DS
= 160V, V
GS
= 0V, T
C
= 125°C)
500
I
GSS
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
±100
nA
V
GS(th)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
35
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

DYNAMIC CHARACTERISTICSAPT20M20JLL
SymbolCharacteristicTest ConditionsMINTYPMAXUNIT
C
iss
Input Capacitance
V

= 0V
6850
SGC
oss
Output Capacitance
V
DS

= 25V
2180
pF
C
rss
Reverse Transfer Capacitance
f

= 1 MHz
95
Q
g
Total Gate Charge
3V
GS

= 10V
110
Q
gs
Gate-Source Charge
V
DD

= 100V
43
I
D

= 104A

@ 25°C
nC
Q
gd
Gate-Drain ("Miller") Charge
47
tTurn-on Delay Time
RESISTIVE SWITCHING
13
d(on)V
GS

=

15V
t
r
Rise Time
V
DD

=

100V
40
snt
d(off)
Turn-off Delay Time
I
D

=

104A

@ 25°C
26
R

=

0.6
Ω
t
f
Fall Time
G
2
INDUCTIVE SWITCHING @ 25°C
E
on
Turn-on Switching Energy
6V

=

130V, V= 15V
465
SGDDE
off
Turn-off Switching Energy
I
D

=

104A, R
G

=

5
Ω
455
E
on
Turn-on Switching Energy
6
INDUCTIVE SWITCHING @ 125°C
920µ
J
V
DD

=

130V, V
GS
= 15V
E
off
Turn-off Switching Energy
I
D

=

104A, R
G

=

5
Ω
915
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
SymbolCharacteristic / Test ConditionsMINTYPMAXUNIT
I
S
Continuous Source Current (Body Diode)
104
spmAI
SM
Pulsed Source Current
1
(Body Diode)
416
V
SD
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
104A
)
1.3
Volts
t
rr
Reverse Recovery Time (I
S
= -I
D
104A
, dl
S
/dt = 100A/µs)
284
ns
Q
rr
Reverse Recovery Charge (I
S
= -I
D
104A
, dl
S
/dt = 100A/µs)
3.06
µC
dv
/
dt
Peak Diode Recovery
dv
/
dt 5
5
V/ns
THERMAL CHARACTERISTICS
SymbolCharacteristicMINTYPMAXUNIT
R
θ
JC
Junction to Case
0.27
W/C°R
θ
JA
Junction to Ambient
40
1Repetitive Rating: Pulse width limited by maximum junction4Starting T
j

=

+25°C, L = 0.46mH, R
G

=

25
Ω
, Peak I
L
= 104A
temperature5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
2Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%device itself.
IS

≤
-
ID
75A
di
/
dt

≤
700A/µs

VR

≤

VDSS

TJ

≤
150
°
C
3See MIL-STD-750 Method 34716Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
03.00.250.9
0.200.7
0.150.5Note:
t10.100.3
t20.05
Duty Factor D = t1/t2
0.1
Peak TJ = PDM x Z
θ
JC + TC
00.05SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
1.010
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

Typical Performance Curves
RC MODEL
tJeumncpt.i (o”nC)
0.04090.0246F
(PWoatwtse)r0.2250.406F
0.003610.147.639F
Case temperature
FIGURE 2, TRANSIENT

THERMAL

IMPEDANCE

MODEL
002180
VDS2>5 I0Dµ S(OENC). xP URLDSSE( OTEN)S TMAX.
@ <0.5 % DUTY CYCLE
061041021100TJ = +125°C
80TJ = +25°C
60TJ = -55°C
04020012345678910
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4,

TRANSFER CHARACTERISTICS
0110010908070605040302010255075100125150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
5.2I
D
= 52A
V
GS
= 10V
0.25.10.15.00.0-50-250255075100125150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, R
DS(ON)
vs. TEMPERATURE

APT20M20JLL
052VGS =15 &10V
V9 0021507.5V
V70015.6V605V5.50051015202530
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW

VOLTAGE

OUTPUT CHARACTERISTICS
1.40
NORMALIZED TO
V
GS
= 10V @ I
D
= 52A
03.102.101.1VGS=10V
00.1VGS=20V
09.00.80020406080100120140160
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS(ON)
vs DRAIN CURRENT
51.101.150.100.159.009.0-50-250255075100125150
T, JUNCTION TEMPERATURE (°C)
FIGURE 7, B
J
REAKDOWN VOLTAGE vs TEMPERATURE
2.11.10.19.08.07.06.0-50-250255075100125150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

514LIOMPITEERDA TBIYO RND HSE (ROEN)
00101TC =+25°C
STIJN =G+L1E5 0P°UCLSE
1110100200
V, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIG
D
U
S
RE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 75A
12VDS=40V
VDS=100VVDS=160V
84

Sµ001Sm101Sm

0020406080100120140160180
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
090870t
d(off)
60
V
DD
= 130V
R
G
= 5
Ω
50
T
J
= 125°C
40
L = 100µH
03t
d(on)
0201020406080100120140
I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT
0041V
DD
= 130V
R = 5
Ω
1200
T
JG
= 125°C
L = 100µH
1000
E
ON
includes
diode reverse recovery.
008006Eno004200E
off
020406080100120140
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT

20,000
10,000
000,1001

APT20M20JLL
CssiCssoCssr

1001020304050
V, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11
D
,
S

CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
002001TJ =+150°C
TJ =+25°C
01

10.30.50.70.91.11.31.5
V, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE
S
1
D
3,

SOURCE-DRAIN DIODE F