MBR735 MBR760 Rev C Fairchild Semiconductor Corporation
3 pages
English

Découvre YouScribe en t'inscrivant gratuitement

Je m'inscris

MBR735 MBR760 Rev C Fairchild Semiconductor Corporation

Découvre YouScribe en t'inscrivant gratuitement

Je m'inscris
Obtenez un accès à la bibliothèque pour le consulter en ligne
En savoir plus
3 pages
English
Obtenez un accès à la bibliothèque pour le consulter en ligne
En savoir plus

Description

Niveau: Supérieur, Doctorat, Bac+8
MBR735 - MBR760 MBR735 - MBR760, Rev. C?2001 Fairchild Semiconductor Corporation MBR735 - MBR760 Schottky Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units PD Power Dissipation 2.0 W R?JA Thermal Resistance, Junction to Ambient 60 °C/W R?JL Thermal Resistance, Junction to Lead 3.0 °C/W Symbol Parameter Device Units 735 745 750 760 VF Forward Voltage IF = 7.5 A, TC = 25°C IF = 7.5 A, TC = 125°C IF = 15 A, TC = 25°C IF = 15 A, TC = 125°C - 0.57 0.84 0.72 0.75 0.65 - - V V V V IR Reverse Current @ rated VR TA = 25°C TA = 125°C 0.1 15 0.5 50 mA mA IRRM Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 1.0 0.5 A Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop.

  • reverse voltage

  • vf forward

  • any license

  • forward current

  • ied fo

  • time without

  • without further

  • current


Sujets

Informations

Publié par
Nombre de lectures 8
Langue English

Extrait

MBR735 - MBR760
MBR735 - MBR760
Features
• Low power loss, high efficiency.
• High surge capacity.
PIN 1 +
+• For use in low voltage, high frequency
CASEPIN 2 - inverters, free wheeling, and polarity
CASE Positive
protection applications. Dimensions
are in:• Metal silicon junction, majority carrier
inches (mm)conduction.
• High current capacity, low forward
voltage drop. 1 2
• Guard ring for over voltage protection.
TO-220AC
Schottky Rectifiers
Absolute Maximum Ratings* T = 25°C unless otherwise notedA


Value
Symbol Parameter Units
735 745 750 760
V Maximum Repetitive Reverse Voltage 35 45 50 60 V RRM
I Average Rectified Forward Current 7.5 A F(AV)
I Non-repetitive Peak Forward Surge Current FSM 150 A
8.3 ms Single Half-Sine-Wave
Storage Temperature Range -65 to +175 T °C stg
T Operating Junction Temperature -65 to +150 °C J
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics

Symbol Parameter Value Units
P Power Dissipation 2.0 W D
Thermal Resistance, Junction to Ambient 60 R °C/W θJA
Thermal Resistance, Junction to Lead 3.0 R °C/W θJL
Electrical Characteristics T = 25°C unless otherwise noted
A


Device Symbol Parameter Units
735 745 750 760
V - 0.75 V Forward Voltage I 7.5 A, T = 25°C F F = C
0.57 0.65 V I 7.5 A, T = 125 C °F = C
0.84 - V I 15 A, T = 25°C F = C 0.72 - V I 15 A, T = 125°C F = C
I Reverse Current @ rated V T = 25 C 0.1 0.5 mA R °R A
15 50 mA T = 125°C A
I Peak Repetitive Reverse Surge Current 1.0 0.5 A RRM
2.0 us Pulse Width, f = 1.0 KHz

2001 Fairchild Semiconductor Corporation MBR735 - MBR760, Rev. CMBR735 - MBR760
Schottky Rectifier
(continued)
Typical Characteristics
10 175
1508
MBR750-MBR760
125
6
MBR735-MBR745
100
SINGLE PHASE
4
HALF WAVE
75 60HZ
RESISTIVE OR
2 INDUCTIVE LOAD
50
.375" (9.00mm) LOAD
LENGTHS
0 25
0 25 50 75 100 125 150 175 12 5 10 20 50 100
Ambient Temperature [ºC] Number of Cycles at 60Hz
Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current
50 50
T = 125 Cº A T = 125 Cº
A 10 MBR735-MBR745 10
T = 25 C ºA
1 T = 75 Cº A
MBR735-MBR745 MBR750-MBR760
1
0.1
T = 25 Cº A
MBR750-MBR760
0.1
MBR735-MBR745 0.01
Pulse Width = 300µS
2% Duty Cycle MBR750-MBR760
0.01 0.001
0 0.2 0.4 0.6 0.8 1 1.2 0 20406080 100 120 140
Forward Voltage, V [V] Percent of Rated Peak Reverse Voltage [%]F
Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage
5000 100
1000
MBR735-MBR745
10
MBR750-MBR760
100
1
10 0.1
0.1 1 10 100 0.01 0.1 1 10 100
Reverse Voltage, V [V] Pulse Duration [s]R
Figure 5. Total Capacitance Figure 6. Thermal Impedance Characteristics
2001 Fairchild Semiconductor Corporation MBR735 - MBR760, Rev. C
Total Capacitance, C [pF] Forward Current, I [A] Average Rectified Forward Current, I [A]
T F F
Transient Thermal Impedance [ºC/W] Reverse Current, I [mA] Peak Forward Surge Current, I [A]
R FSMTRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
? SMART START™ VCX™FASTACEx™ OPTOLOGIC™
STAR*POWER™FASTr™Bottomless™ OPTOPLANAR™
Stealth™FRFET™CoolFET™ PACMAN™
SuperSOT™-3GlobalOptoisolator™CROSSVOLT™ POP™
SuperSOT™-6GTO™DenseTrench™ Power247™
? SuperSOT™-8HiSeC™DOME™ PowerTrench
SyncFET™ISOPLANAR™EcoSPARK™ QFET™
2 TM TinyLogic™LittleFET™E CMOS QS™
TM TruTranslation™MicroFET™EnSigna QT Optoelectronics™
UHC™MicroPak™FACT™ Quiet Series™
?? UltraFETMICROWIRE™FACT Quiet Series™ SILENT SWITCHER
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4

  • Accueil Accueil
  • Univers Univers
  • Ebooks Ebooks
  • Livres audio Livres audio
  • Presse Presse
  • BD BD
  • Documents Documents