Mesoscopic simulation of photoresist processing in optical lithography [Elektronische Ressource] = Mesoskopische Simulation der Photolackbearbeitung in der optischen Lithographie / vorgelegt von Thomas Schnattinger

Informations

• Publié par: friedrich-alexander-universitat_erlangen-nurnberg
• Publié le: 01 janvier 2008
• Nombre de lectures: 11
• Langue: English
• Poids de l'ouvrage: 5 Mo

Extrait

akult?tMesoscopicvSimergulationecofh-Alexander-UnivPhotoresistGradesProhnattingercessingheninFOpticalErlangen-N?rnLithographErlangungyvMesoskThomasopischehniscSimFulationderderriedricPhotolacersit?tkbbearbzureitungdesinDoktor-IngenieurderorgelegtoptisconhenScLithographieErlangenDer2007TPromotion:AlshDissertationDekgenehmigtPvemonJohannesderHeinerTagecNohniscerhenProf.Ferakult?tProf.derProf.FWriedricderh-Alexander-Univ23.ersit?tvErlangen-N?rnbb2007ergan:TDr.-Ing.agHubderBericEinreicterstatter:hDr.-Ing.ung:Ryssel6.Dr.-Ing.Julieter2007ellmannTIAsimcM.knoher,wledgemenenen,tsfulIork.wBesides,ouldouldlikolkeandtoDr.expressISB,mtoystartedgratitudealltotoallDr.thoseanscwhoChristiangaRei-vIeerhardmeoftheatportossibiliteyKandnothelpFedlikmetstoIwriteInthisthankthesis.v,FirstDr.ofTimall,StefanIys.wDipl.-PhouldSc.likiedeeplytoDr.thankImLorenz,ytecsupdepartmenervisorraunhoferProf.hisDr.thisHeineroRysselecialforDr.theai.pwossibilitvyorkingtoIwworktoatandFFraunhoferwithItheISBorkasIweellGheorgheasBurenkforelicitashisChristophguidanceeterduring,mDr.yH?ublein,researc,hen,andtwritingZhabizofDathisold,thesis.engIStefanwthesis,ouldamlikgrate-etotoEbthankB?r.Prof.thankDr.J?rgenPheadetertheWhnologyellmannulationforthisFreadinessItoforco-examinesuppthisofthesiswandIhiswhelpfulspremarks.thanksManPDyGabriellathanks?kgoWithouttoIDr.ouldAndreashaErdmanneforwhisatexcellenraunhofertISB.suppIort.ouldWithoutewthankorkingcolleaguesunderstudenhisatsupraunhoferervisionISBinwhomthehadlithographpleasureywsimwith.ulationparticular,groupwatlikFtoraun-Dr.hoferArdelean,IAlexISB,oIFwCoouldDipl.-Math.notD?rr,haPvEvehitzkybDipl.-Inf.eenF?hner,ableVtoerconductDipl.-Ing.thisHussyresearcDipl.-Ing.hKampandDipl.-PhsuccessfullyB?lincompleteMeliorisz,thisSc.thesis.Rahimi,Fys.orvidnbumerousM.helpfulFdiscussionsShao,andDipl.-Math.remarksZ?rner.onthisiiThisAbstractiiiThedevreductionTheofthesemiconductorimpactdevicewithdimensionsonecessitates,yamongstinotherelopthings,er-arequiredreductionsimindevlinewidtholymersuctuationtheofdelsthesimindividualaluation.deviceofcompvo-propnenats.ulationThememoryacproachievandementhetulationofofspelop-eciedetolerancesproleforwithfutureerimentecdatahnologyadditionalisoutanalgorithmastheyositionetnewunsolvusededandproblemuctuation.forfrommassomaneufacture.reducesThetimeimpactwhenofstandardmanforyofproprocessalgorithmandtmaterialtparametersbinesonerlap-freeresultingphotoresistlinewidthcalibrateductuationtisquanknohwnvexppredictederimen-motallymacroscopic,ex-butdatanotime.mofromdelslationsyost-proettoexistautomatedthatecienallobwedabiguoussuciensurfacetlytheaccuratephotoresist.predictiondelsofblinewidthanalyzeuctuation.proIntoresistthisonthesis,withnewtalmoshodelseryforagreementhebakmesoscopicsim(i.e.,algorithmdiscretetheandcomputingstoandcresourceshastic)comparedsimtheu-ap-lationhofmesoscopicphotoresistulationpatterningreactionindiusionopticalcesses.lithographnewyforhasubsequenvphotoresisteelopmenbsimeencomdevanelopveddescriptionandtheimplemenpted.withItdevhasmenbrates.eenenablesprotitativvmatcenofthatamoeragedelinglinewidthofbthemesoscopicPdelsoissonestablisheddistributedmonandum-pbtalerforofrstphotonsProle(soobtainedcalledmesoscopicshotu-noise)requiresispunnecessarycessing.orderThiscarryimplies,anconevtraryAntotcommonhasbeenelievelopeforinunamliterature,determinationthatthethepaofvdeverageednTheummobhaereofeenphotonstoabsorbtheedofduringcessphotoresistpho-expmaterialosureertieshaslinewidthnoComparisonsdirectexpimpactimenondatalinewidthliteratureuctuation.wThevnewgophotoresistdpt.ost-exposureCTivABSTRA.Con.ten.ts.Abstract.iii.Sym.b.ols.andeAbbreviations.ix.1.In.tro.ductionand1.2.Photoresist.Pro.cessing.5.2.1elopmenMaterials......Hardbak.......13.......ulation...................2.6...............13..6.2.2.Cleaning,.Priming,.and.Coating....Etc.............2.9.hes...........14....8.2.3.Prebak.e..............12.Dev.t.............................2.7.e............8.2.4.Exp.osure............2.8.hing.Cleaning.......................14.Sim.Approac................9.2.5.P.ost-Exp.osurevBak.vi.CONTENTS.2.9.1.Simplied.Mo.dels..........4.4.1.1.................op...Description.....37..16Exp2.9.2.F42ull.Mo.dels....elopmen.......Dev.......olution.....dels.............dels........17.2.10.Pro.cesshesQualit.y.EvMoaluation..........3.4...............31.t...........3.4.219y2.10.1.Prole.Geometry......Photoresist.4.1.............Approac...........New........20.2.10.2.Pro40cess.Windo.ws............Existing...........4.2.2.............45....20.3.Macroscopic28PhotoresistDevMotdels.23.3.1.Photoresist.Description....................3.4.1.elopmen.Rates....................23313.2TExpographosureEv...................34.Mesoscopic.Mo.35.Photoresist.......................36.Existing.hes....24.3.2.1.Optical.Pro.jection.System......4.1.2.Mo..........................254.23.2.2osurePhotoresist.Exp.osure..........................4.2.1.Approac..........26.3.3.P.ost-Exp.osure.Bak43eNew.dels...........................CONTENTStoviiRoughness4.3.P.ost-Exp80osure.BakFindingse71.........tra.........4.6.2.............Impact.....Gate.....ariations.Photomask48.4.3.1erageExisting.Approac.hes....75.5.1.......T.....85.Gate.....Gate.....ariations...90..49.4.3.25.5New.Mo.delsPhotoresist...........A.Linewidth.........Computing.........Line.Photoresists..............54Measuremen4.4hniquesDev.elopmen.t......T.T.........87.T.........5.4.1.Width.........In.V.........erimen.the55.4.4.1.Existing.Approac91heskness.......91.............4.6.1.v.Prole..............56.4.4.273NewRequiredMoTimedels................5.Edge.of.79.Characterization........................61.4.55.2Ptostproeccessing.of.Sim.ulated.Prole.Data............5.3.ransfer.the.ransistor......68.4.5.1.Existing.Approac.hes....5.4.of.ransistor.Roughness...............88.In.Gate.V........68.4.5.2.New.Mo.dels5.4.2.ter.Width.ariations...............91.Exp.tal.on.Causes...............5.5.1.Thic.V68.4.6.Comparison.with.Macroscopic.Mo.dels..5.5.2.Roughness...................93.andviii.CONTENTS.5.5.3ofA.erial.Image.QualitPyhnis...kness.Image.108.....dels.135.tro.Line...Impact...Impact.....A....94Concen5.5.4.Aofcid.DiusionBibliographLength141.143...103.Roughness.....104.Photoresist.ariations...106.A.trast.......Impact.Diusion..95.5.5.5.Quenc5.6.5herherBase.Concen.tration111.and.New...6.ok.119.Zusammenfassung.Inhaltsv.ten.Einleitung.147.....5.6.198Edge5.5.6CharacterizationP.olymer.Chain.Geometry....5.6.2.of.Thic.V.........5.6.3.of.erial.Con........100.5.5.7.Hardbak.e5.6.4.of.cid.Length.............109.Impact.Quenc.Base.tration.........5.6.6.ossibilities.Limitations.the.Mo.....113102Summary5.6OutloComparison115ofySimIndexulationsAand(Abstract)ExpBerimenerzeicts(Con.ts).C.(In.duction)..