Near field spectroscopy of semiconductor device structures and plasmonic crystals [Elektronische Ressource] / von Viktor Malyarchuk

Sujets

• Physik

Informations

• Publié par: humboldt-universitat_zu_berlin
• Publié le: 01 janvier 2003
• Nombre de lectures: 11
• Langue: English
• Poids de l'ouvrage: 4 Mo

Extrait

Near-field spectroscopy of semiconductor
device structures and plasmonic crystals
DISSERTATION
zur Erlangung des akademischen Grades
doctor rerum naturalium
(dr. rer. nat.)
im Fach Physik
eingereicht an der
Mathematisch-Naturwissenschaftlichen Fakultät I
Humboldt-Universität zu Berlin
von
Herr Dipl.-Phys. ViktorMalyarchuk
geboren am 13.05.1973 in Ternopil (Ukraine)
Präsident der Humboldt-Universität zu Berlin:
Prof. Dr. J. Mlynek
Dekan der Mathematisch-Naturwissenschaftlichen Fakultät I:
Prof. Dr. M. Linscheid
Gutachter:
1. Prof. Dr. Thomas Elsässer
2. Prof. Dr. Oliver Benson
3. Prof. Dr. Paul Fumagalli
eingereicht am: 25. April 2003
Tag der mündlichen Prüfung: 10. September 2003Contents
Contents i
Acknowledgments iv
Publications in conjunction with this thesis v
Conference contributions in conjunction with this thesis vii
Curriculum Vitae viii
Selbständigkeitserklärung ix
Zusammenfassung x
1 Introduction 1
2 Introduction into nano-optics 6
2.1 Maxwell equations . . ....................... 6
2.1.1 Maxwell equations and general assumptions . ....... 6
2.1.2 Wave equation 7
2.1.3 Scaling properties of the Maxwell equations . 8
2.2 Eigenvalue problem . . 9
2.2.1 General eigenvalue problem . ............... 9
2.2.2 Electromagnetic eigenvalue problem . ........... 10
2.2.3 Electromagnetism and quantum mechanics . ....... 11
2.3 Diffraction limit ........................... 12
2.3.1 Kirchhoff diffraction theory . 12
2.3.2 Resolution limit of the conventional far-field optical system 14
2.3.3 Problems in breaking the diffraction limit . . ....... 16
2.4 Theoretical concepts of the near-field scanning optical microscopy 17
2.4.1 Hertzian dipole ....................... 17
2.4.2 Resolution limits in near-field optics . ........... 20
2.4.3 Experimental configurations . ............... 20
iContents
3 Experimental setup 22
3.1 Fiber tips and resulting quality of the experiment . ........ 22
3.1.1 Main types of near-field tips ................ 22
3.1.2 Fabrication of near-field fiber tapers ............ 24
3.2 Feedback mechanism ........................ 25
3.2.1 NSOM feedback basics . . . 25
3.2.2 Optical . . .................... 28
3.3 NSOM spectrometer 29
3.3.1 Room temperature near-field microscope . ........ 29
3.3.2 Excitation sources . 31
3.3.3 Detection techniques 32
4 Spectroscopy of semiconductor device structures 33
4.1 Laser diodes and their epitaxial structures . ............ 34
4.1.1 Fabrication methods for semiconductor device structures . 34
4.1.2 Emission and absorption in semiconductors ........ 35
4.1.3 Basic elements of semiconductor diode lasers . . . .... 42
4.1.4 Optical gain and threshold condition ............ 44
4.1.5 Quantum well structures . . ................ 46
4.2 Waveguiding modes and the method of the fake waveguide .... 48
4.2.1 Eigenmodes of semiconductor laser waveguides . . 48
4.2.2 First order perturbation theory for waveguides . . . .... 53
4.3 Near-field photocurrent imaging of the semiconductor laser diodes... 56
4.3.1 Waveguide mapping problem . . . ............ 56
4.3.2 Samples under investigation ................ 56
4.3.3 Direct mapping of the optical mode profiles ........ 57
4.3.4 Theoretical model of the NPC experiment . 61
4.3.5 Experiment vs. theory notes 62
4.4 Nanostack ............................. 63
4.4.1 Monolitic stacked lasers . . ................ 63
4.4.2 Stacked laser samples and experimental technique .... 64
4.4.3 Electroluminescence and laser emission experiment 65
4.4.4 Photoluminescence experiment . . ............ 65
4.4.5 Photocurrent experiment . . 67
4.4.6 Signal generation mechanisms . . . 68
4.4.7 Explanation of the laser stack asymmetric behavior .... 69
4.4.8 Nanostack summary . . . ................ 70
4.5 Novel technique for determination of surface recombination ve-
locity... . . . ............................ 70
4.5.1 Problem particularities and experemental details . .... 70
4.5.2 2D-diffusion model . .................... 73
4.5.3 Discussion . ........................ 75
iiContents
5 Plasmon nano-optics 77
5.1 Metallic particularities ....................... 78
5.1.1 What is different from dielectric . . . ........... 78
5.1.2 Volume and surface plasmons ............... 78
5.1.3 Dispersion relation for surface plasmons . . . ....... 79
5.1.4 Plasmonic bandgap . . ................... 82
5.1.5 Photonic crystals vs. plasmonic crystals . . . 85
5.2 Methods of calculations for photonic and plasmonic crystals . . . 86
5.2.1 Time domain vs. frequency domain . ........... 86
5.2.2 Plane wave method . . 87
5.2.3 Transfer matrix method 89
5.2.4 Finite difference time domain method 90
5.3 Surface plasmon nano-optics at near- and far-fields . ....... 92
5.3.1 Sample description and experimental details . 92
5.3.2 Light emission from the shadows . . ........... 93
5.3.3 FDTD simulation . . . ................... 94
5.4 Microscopic Origin of Surface Plasmon Radiation in Plasmonic
Crystalls ............................... 96
5.4.1 Problems, samples and used techniques . . . ....... 96
5.4.2 Surface plasma damping experiments ........... 98
5.4.3 Time domain experiments . . ...............100
5.4.4 Microscopic origin of the SP damping101
5.4.5 Determination of the FWHM of the transmission peaks . . 103
5.4.6 Bandgap formation . . ...................105
5.4.7 Hole size dependence of the SP scattering . . .......107
5.5 Superposition of polarization controlled surface waves in the near-
field . .108
5.5.1 Polarization dependence of NF emission patterns . . . . . 108
5.5.2 Wavelength of NF . . . . . 109
5.5.3 AM vs. SM resonances...................111
5.6 Evolution of the near-field patterns into the far-field . .......113
5.6.1 Transition form near-field into far-field . . .113
5.6.2 Nano-slits diffraction analysis ...............116
6 Conclusions 120
A First order perturbation theory 123
B Derivation of the dispersion relation of SPs on a surface... 127
C Room temperature PL spectra from GaAs:C 129
References 133
Index 146
iiiAcknowledgments
I feel indebted to many people from our scientific team who made significant
contribution into success of presented work.
At fist place I would like to thank Prof. T. Elsässer for opportunity to partic-
ipate in the work of his group on delightsome projects involving bleeding edge
near-field spectroscopy, and for his interest at all stages of investigations. I have
greatly benefited from his leadership and experience.
I am deeply appreciating the knowledge that I acquire from Dr. J. W. Tomm.
His contribution in understanding photocurrent near-field spectroscopy can hardly
be overestimated. I thank him for productive discussions, critical readings of the
manuscript and for the help I have been getting during my work at MBI.
I am grateful to Dr. Ch. Lienau for his dedication and uncompromised main-
tenance of high-quality scientific standards. I learn from him what is to be a real
scientist. I thank him for supervision of our experiments, informative discussions
and careful readings of the manuscript.
I am thankful to Prof. D. S. Kim for providing us with plasmonic samples, for
time spent in laboratory and for stimulating discussions.
I owe to T. Günther, S. C. Hohng and Y. C. Yoon many days shared in the
laboratory. I thank them for their contribution in success of experimental part of
this work.
I am thankful to Dr. R. Müller for his FDTD calculations and for his patience
and help in improving my German during discussions about plasmon physics.
I express my gratitude to Monika Tischer for patience and reliability in the
fabrication of probes and for hours spent in REM-laboratory.
I want to thank Dr. V. Kalosha and Dr. A. Husakou for numerous theoretical
tips and tricks.
I am thankful to members of the department (current and former) including
Felix Eickemeyer, Francesca Intonti, Julian Edler, Matteo Rini, Jens Stenger,
Valentina Emiliani, Nils Huse, Markus Raschke, Karsten Heyne, Kerstin Müller,
Sendy Schwirzke-Schaaf, Axel Gerhardt, Thomas Unold for all kind of help I
have always got when I needed it and for a nice friendly working atmosphere.
Particular thanks to friends for their support, understanding and patience for
my permanent lack of time.
I am grateful to my parents for their continuous support in all my endeavors.
And very spacial thanks and admiration to my wife Iryna. Her love, patience,
understanding and support helped me enormously to succeed in this challenge.
ivPublications in conjunction with this
thesis
[1] T. Guenther, V. Malyarchuk, J. W. Tomm, R. Mueller, C. Lienau, and J. Luft,
“Near-Field Photocurrent Imaging of the Optical Mode Profiles of Semicon-
ductor Laser Diodes,” Appl. Phys. Lett. 78, 1463–1465 (2001).
[2] S. C. Hohng, V. Malyarchuk, C. Lienau, and D. S. Kim, “Surface plasmon
optic devices and radiating surface plasmon sources for photolithography,”
Invention disclosure (2001), internal Application No. PCT/KR01/01921.
[3] A. Maaßdorf et al., “Minority-carrier kinetics in heavily doped GaAs:C stud-
ied by transient photoluminescence,” J. Appl. Phys. 91, 5072–5078 (2002).
[4] J. W. Tomm et al.