Optical and electronic properties of InGaAs and nitride quantum dots [Elektronische Ressource] / von Norman Baer

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ITP FB1University ofBremen InstituteforTheoretical PhysicsOpticalandElectronicPropertiesofInGaAsandNitrideQuantumDotsbyNormanBaer,June2006pMulti-ExcitonSpectrainInGaAs QuantumDotsMulti-ExcitonSpectrainNitrideQuantumDots3X→ 2X4X→ 3X5X→ 4X6X→ 5XSemiconductor Luminescence Equationsgijξδk· pk· pp2Hξ = ε ξ H =− Δ+V (r)α α α λ2mλΓΔEλ0; rV (r)=λΔE ;λλ = e λ = hr =16h=4.0z =1.60ΔE = 350em =0.065 me 03503002502001501005000 1 2 3 4|m|ω =38 .5780.3 0.20.150.20.1|m|=0 |m|=10.10.0500−0.05−0.1−0.1−0.2 −0.150 5 10 15 20 25 30 0 5 10 15 20 25 30ρ ρ0.140.140.120.120.1 0.1|m|=2|m|=30.08 0.080.06 0.060.04 0.040.02 0.020 00 5 10 15 20 25 30 0 5 10 15 20 25 30ρρk.p∗ξ = ξ = ξi,e ii,h∗ξ = ξ ii,e i,hHH0(e,h)εiH e † h †H = ε e e + ε h h ,0 iσ iσi iσ i iσiσ iσ 1 1† † † †ee hhH = V e e e e + V h h h h Coul kσ lσ kσ lσij,kl iσ jσ ij,kl iσ jσ2 2ijkl ijkl σσ σσ† †he− V h e e h . kσ lσij,kl iσ jσijklσσ†e e σiσ iσe|i εi† hh h εiσ iσ ir|i, λ = ψ (r)i,λ λλ 3 3 λ∗ λ∗ λ λV = d r d r ψ (r)ψ (r )V (r−r )ψ (r )ψ (r)ij,kl i j k l2λ = e, h V (r)=e /4π r0 rλ ψr iλ λ λξ (r)u (r) u (r)i k=0 kλξ (r)i he,3 3 h∗ e∗ e h V = d r d r ψ (r)ψ (r)V (r− r )ψ (r )ψ (r )ij,kl i j k lλu (r)kk · phe,Vij,kl λλ λλX = Vij ij,ij∗ξ = ξi,e i,hhh ee he eeV = V and V = V .ij,kl kl,ij ij,kl lj,kim =0.065 me 0m =0.17 mh 0 =13.

Sujets

• Physik

Informations

• Publié par: universitat_bremen
• Publié le: 01 janvier 2006
• Nombre de lectures: 21
• Poids de l'ouvrage: 6 Mo

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