Passivation of the p-n junction edge in high-power semiconductor silicon devices ; Didelės galios puslaidininkinių silicio prietaisų p-n sandūros krašto pasyvacija

Jurga

Description

VILNIUS UNIVERSITY SEMICONDUCTOR PHYSICS INSTITUTE Dainius Šalucha PASSIVATION OF THE p-n JUNCTION EDGE IN HIGH-POWER SEMICONDUCTOR SILICON DEVICES Summary of Doctoral Dissertation Technological Sciences, Material Engineering (08T) Vilnius, 2009 The investigations have been carried out at Vilnius University and Semiconductor Physics Institute in 2004 to 2009. Scientific Supervisor: Dr. Sci. Irena Šimkien ė (Semiconductor Physics Institute, Technological Sciences, Material Engineering - 08T) Defence of Dissertation will be held at Council of Materials Engineering Science trend: Chairman Prof. Dr. Sci. Steponas Ašmontas (Institute of Semiconductor Physics, Technological Sciences, Material Engineering - 08T) Members Prof. Dr. Sci. Antanas Feliksas Orliukas (Vilnius University, Technological Sciences, Material Engineering - 08T) Prof. Dr. Sci. Sigitas Tamulevi čius (Kaunas University of Technology, Technological Sciences, Material Engineering - 08T) Assoc. Prof. Dr. Bonifacas Vengalis (Institute of Semiconductor Physics, Technological Sciences, Material Engineering - 08T) Prof. Dr. Sci. Rimas Vaišnoras (Vilnius Pedagogical University, Physics Science, Physics – 02P) Opponents: Prof. Dr. Sci. Albertas Laurinavi čius (Semiconductor Physics Institute, Technological Sciences, Material Engineering - 08T) Prof. Dr. Sci.

Sujets

• Materials science

Informations

• Publié par: vilnius_university
• Publié le: 01 janvier 2009
• Nombre de lectures: 140

Extrait

 

VILNIUS UNIVERSITY SEMICONDUCTOR PHYSICS INSTITUTE                             Dainius alucha           PASSIVATION OF THEp-nJUNCTION EDGE IN HIGH-POWER SEMICONDUCTOR SILICON DEVICES                   Summary of Doctoral Dissertation   Technological Sciences, Material Engineering (08T)                 Vilnius, 2009  

  The investigations have been carried out at Vilnius University and Semiconductor Physics Institute in 2004 to 2009.   Scientific Supervisor: Dr. Sci. Irena imkienė Physics Institute, Technological Sciences, (Semiconductor Material Engineering - 08T)   Defence of Dissertation will be held at Council of Materials Engineering Science trend:    Chairman   Prof. Dr. Sci. Steponas Amontas (Institute of Semiconductor Physics, Technological Sciences, Material Engineering - 08T) Members  Prof. Dr. Sci. Antanas Feliksas Orliukas (Vilnius University, Technological Sciences, Material Engineering - 08T) Prof. Dr. Sci. Sigitas Tamulevičius (Kaunas University of Technology, Technological Sciences, Material Engineering - 08T) Assoc. Prof. Dr. Bonifacas Vengalis (Institute of Semiconductor Physics, Technological Sciences, Material Engineering - 08T) Prof. Dr. Sci. Rimas Vainoras (Vilnius Pedagogical University, Physics Science, Physics  02P)   Opponents:  Prof. Dr. Sci. Albertas Laurinavičius (Semiconductor Physics Institute, Technological Sciences, Material Engineering - 08T) Prof. Dr. Sci. Kę(Institute of Chemistry, Physics Science, Chemistrystutis Juodkazis  03P)   Public defence of the Dissertation will take place at the open meeting in the in Conference Hall of Semiconductor Physics Institute at 10 a.m. on June 19, 2009. Address: A. Gotauto str.11, LT-01108 Vilnius, Lithuania. Tel. [phone], fax [phone]; e-mail [e-mail] The summary of dissertation has been sent on May 19, 2009.   The Dissertation is available at the Libraries of Vilnius University and Semiconductor Physics Institute.