Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs

Vasallo García, Beatriz, Wichmann, N., Bollaert, Sylvain, Roelens, Yannick, Cappy, Alain, Sánchez González, Tomás, Collantes Pardo, Daniel, López Mateos, Javier

Description

Colecciones : GIDS. Artículos del Grupo de Investigación en Dispositivos Semiconductores
Fecha de publicación : 2007
Se han estudiado las características estáticas y dinámicas de HEMTs de doblre puerta (DG-HEMTs) por medio de simulaciones Monte Carlo, y se han comparado con las de los HEMTs de puerta única. Las simulaciones reproducen adecuadamente los resultados experimentales y permiten confirmar y explicar desde el punto de vista microscópico el origen de la reducción de los efectos de canal corto y el aumento de fmax que se observa en los transistores de doble puerta.The static and dynamic behavior of InAlAs/InGaAsdouble-gate high-electron mobility transistors (DG-HEMTs) isstudied by means of an ensemble 2-D Monte Carlo simulator.The model allows us to satisfactorily reproduce the experimentalperformance of this novel device and to go deeply into its physicalbehavior. A complete comparison between DG and similarstandard HEMTs has been performed, and devices with differentgate lengths have been analyzed in order to check the attenuationof short-channel effects expected in the DG-structures. Wehave confirmed that, for very small gate lengths, short-channeleffects are less significant in the DG-HEMTs, leading to a betterintrinsic dynamic performance. Moreover, the higher values ofthe transconductance over drain conductance ratio gm/gd and,especially, the lower gate resistance Rg also provide a significantimprovement of the extrinsic fmax.

Sujets

• Sciences et techniques

Informations

• Publié par: Salamanca
• Nombre de lectures: 25
• Licence : En savoir +
  Paternité, pas d'utilisation commerciale, partage des conditions initiales à l'identique
• Langue: Español

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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 11, NOVEMBER 2007

Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs Beatriz G. Vasallo, Nicolas Wichmann, Sylvain Bollaert, Yannick Roelens, Alain Cappy, Senior Member, IEEE , Tomás González, Senior Member, IEEE , Daniel Pardo, and Javier Mateos

Abstract —The static and dynamic behavior of InAlAs/InGaAs double-gate high-electron mobility transistors (DG-HEMTs) is studied by means of an ensemble 2-D Monte Carlo simulator. The model allows us to satisfactorily reproduce the experimental performance of this novel device and to go deeply into its phys- ical behavior. A complete comparison between DG and similar standard HEMTs has been performed, and devices with different gate lengths have been analyzed in order to check the attenua- tion of short-channel effects expected in the DG-structures. We have confirmed that, for very small gate lengths, short-channel effects are less significant in the DG-HEMTs, leading to a better intrinsic dynamic performance. Moreover, the higher values of the transconductance over drain conductance ratio g m /g d and, especially, the lower gate resistance R g also provide a significant improvement of the extrinsic f max . Index Terms —Double-gate high-electron mobility transistor (DG-HEMT), dynamic behavior, Monte Carlo (MC) simulations. I. I NTRODUCTION ility transistors (HEMTs) I h n a P v - e BA pr S o E v D ed h t i o gh e - x e h l i e b c i t t ro a n ne m x o c b ellentperformanceforap- ( F L i i g l . le 1 , . Fra S n E ce M ). imageofa100-nm-gateDG-HEMTfabricatedintheIEMN plications in the microwave and millimeter-wave frequency ranges [1]. To further improve the frequency operation of these  microwave performance of the HEMTs. To avoid these effects, devices, their gate length L g has been reduced down to the tech- nological limit. In this way, a cutoff frequency f t of 562 GHz  a vertical scaling of the layer structure must go along with the and a maximum oscillation frequency f max of 330 GHz have  r L e g d / u a ct , io w n he o r f e th a e i g s a t t h e e le d n is g t t a h n i c n e o b r e d t e w r e to en ke th e e pa ga h t i e g e h le a c s t p r e o c d t e ra a t n io d been obtained in a T-gate InAlAs/InGaAs pseudomorphic  the 2-D channel electron gas. This scaling rule is limited by the HEMT by reducing L g down to 25 nm [2]. The reduction of  emergence of a leakage current through the Schottky barrier the source and drain parasitic resistances by using a multilayer captechnologyina30-nm-gate-lengthstructureallowedusto 8 at – t 1 h 0 e n g m at . e; Th th e u n, s, f t t h c is an d n is o t t a s n c c a e le ca u n p n a ot ny b m e o r r e e du w c i e th dt L o g . le T ss he th d a e n - reach an f max of 400 GHz, together with a simultaneously high f t of 547 GHz [3]. However, very small values of L g involve vice aspect ratio is consequently considered as the fundamental theso-calledshort-channeleffects(thegatecapacitancedoes lim T it o o k f e H ep E o M n T i s. mprovingthefrequencyperformanceofthese not scale with L g anymore, and the transconductance g m and transistors  (especially regarding f max ), alternative solutions the output conductance g d are deteriorated), which limit the  based on an evolution of the standard HEMT design have been considered. Thus, the double-gate HEMT (DG-HEMT), which is a HEMT with two gates placed on each side of the conducting Manuscript received April 5, 2007; revised July 5, 2007. This work was [ I 4 n ] G – a [6 A ]. s E c v h e a n nn i e f l t ( h s i e s e id F e i a g. w 1 a ) s , c h o a n s ce b i e v e e n ds re o c m e e ntl ti ydeve g l o op f e o d supported in part by the Dirección General de Investigación (MEC, Spain) and me a r FEDER through the Project TEC2004-05231 and in part by the Consejería sh e first de Educación of the Junta de Castilla y León (Spain) through the Project t S i i m -d e e t v o ice o s ur [7 k ] n – o [9 w ] l , e t d h g e e, a t u h t e ho f r a s br i i n ca [ t 4 i ] o – n [6 o ] fD o G w -t , ra f n o s r is t t h orson SA044A05. This work has been performed in the framework of Institut de III–V materials. In those previous works [4]–[6], we have Recherche en Composants pour l’Information et la Communication Avancée (IRCICA). The review of this paper was arranged by Editor M. Anwar. -HEMT which B. G. Vasallo, T. González, D. Pardo, and J. Mateos are with the Departa- r e e x p hi o b rt it e s d a th v e e f r a y br h i i c g a h tio ex n tr o i f ns a ic 10 g 0 m -n a m nd T- a ga g te oo D d G pinchoff , behav- mento de Física Aplicada, Universidad de Salamanca, 37008 Salamanca, Spain ior (lower g d ) as compared with the conventional single-gate (e-mail: [e-mail]; [e-mail]). N. Wichmann, S. Bollaert, Y. Roelens, and A. Cappy are with the Institut e de d’Electronique, de Microélectronique et de Nanotechnologies–Département ( a S b G e ) t - te H r E c M ha T r . g T e hi c s o h n a tr p o p l n a s nd sin c c o e u t n h te e ra D ct G s g t e h o e m e e f t f r e y ct ca o n f p c r a o r v r i ier Hyperfréquences et Semiconducteurs, 59652 Villeneuve d’Ascq, France. Digital Object Identifier 10.1109/TED.2007.907801 injection into the buffer (since no buffer is used in the structure). 0018-9383/$25.00 © 2007 IEEE

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