The aluminium-induced layer exchange forming polycrystalline silicon on glass for thin-film solar cells [Elektronische Ressource] / vorgelegt von Oliver Nast

Informations

• Publié par: philipps-universitat_marburg
• Publié le: 01 janvier 2002
• Nombre de lectures: 12
• Langue: English
• Poids de l'ouvrage: 10 Mo

Extrait

Al
Dissertation
zur
Erlangung des Doktorgrades
der Naturwissenschaften
(Dr. rer. nat.)
dem
Fachbereich Physik
der Philipps-Universität Marburg
vorgelegt von
Oliver Nast
aus Stuttgart
Marburg/Lahn 2000

Vom Fachbereich
der Philipps-Universität Marburg als Dissertation am 14. Sept. 2000
angenommen.
Erstgutachter Prof. Dr. W. Fuhs
Zweitgutachter Prof. Dr. G. Weiser
Tag der mündlichen Prüfung am 2. Nov. 20003

2.1 Metal and a-Si interaction ...................................................................................11
2.2 The Al and Si layer exchange process.................................................................17
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3.1 Preparation...........................................................................................................23
3.2 Characterisation...................................................................................................25
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4.1 Si grain formation and growth.............................................................................29
4.2 Al and a-Si layer thickness ratio..........................................................................35
4.3 Temperature dependence.....................................................................................38
4.4 Influence of the polycrystalline Al......................................................................40
4.5 The Al/Si interface layer42
4.5.1 Microscopical investigations42
4.5.2 XPS measurements46
4.5.3 No interface oxide ......................................................................................51
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5.1 The Al content.....................................................................................................55
5.2 Grain structure and orientation............................................................................59
5.3 Electrical properties.............................................................................................69
5.3.1 Hall effect measurements ...........................................................................69
5.3.2 Influence of the annealing temperature......................................................734 Contents
5.3.3 Substitutional and non-substitutional Al concentration............................. 74
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6.1 The overall layer exchange ................................................................................. 79
6.2 Interface interaction ............................................................................................ 82
6.3 Crystallization ..................................................................................................... 86
6.4 Si grain growth.................................................................................................... 91
6.5 Discussion ........................................................................................................... 97