1Motorola Thyristor Device Data
6 pages
English

1Motorola Thyristor Device Data

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Description

Niveau: Secondaire, Lycée, Terminale
1Motorola Thyristor Device Data Silicon Controlled Rectifiers . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • 300 A Surge Current Capability MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Value Unit *Peak Forward and Reverse Blocking Voltage(1) (Gate Open, TJ = 25 to 125°C) 2N6504 2N6505 2N6507 2N6508 2N6509 VDRM, VRRM 50 100 400 600 800 Volts Forward Current (TC = 85°C) (180° Conduction Angle) IT(RMS) IT(AV) 25 16 Amps Peak Non-repetitive Surge Current — 8.3 ms (1/2 Cycle, Sine Wave) 1.5 ms ITSM 300 350 Amps Forward Peak Gate Power PGM 20 Watts Forward Average Gate Power PG(AV) 0.5 Watt Forward Peak Gate Current IGM 2 Amps Operating Junction Temperature Range TJ –40 to +125 °C Storage Temperature Range Tstg –40 to +150 °C *THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R?JC 1.5 °C/W *Indicates JEDEC Registered Data.

  • state forward

  • voltage rating

  • vtm —

  • junction temperature

  • turn-off time

  • temperature range

  • gate open

  • current


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SEMICONDUCTOR TECHNICAL DATA by 2N6504/D
Silicon Controlled Rectifiers *Motorola preferred devices
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supply crowbar circuits. SCRs
• Glass Passivated Junctions with Center Gate Fire for Greater Parameter 25 AMPERES RMS
Uniformity and Stability 50 thru 800 VOLTS
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat
Dissipation and Durability
• Blocking Voltage to 800 Volts
G
• 300 A Surge Current Capability
A K
CASE 221A-07
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)J
Rating Symbol Value Unit
(1)*Peak Forward and Reverse Blocking Voltage V , V VoltsDRM RRM
(Gate Open, T = 25 to 125°C) 2N6504 50J
2N6505 100
2N6507 400
2N6508 600
2N6509 800
Forward Current (T = 85°C) I 25 AmpsC T(RMS)
(180° Conduction Angle) I 16T(AV)
Peak Non-repetitive Surge Current — 8.3 ms I 300 AmpsTSM
(1/2 Cycle, Sine Wave) 1.5 ms 350
Forward Peak Gate Power P 20 WattsGM
Forward Average Gate Power P 0.5 WattG(AV)
Forward Peak Gate Current I 2 AmpsGM
Operating Junction Temperature Range T –40 to +125 °CJ
Storage Temperature Range T –40 to +150 °Cstg
*THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R 1.5 °C/WJC
*Indicates JEDEC Registered Data.
1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gateDRM RRM
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
1Motorola Thyristor Device Data
 Motorola, Inc. 1998
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)C
Characteristic Symbol Min Typ Max Unit
*Peak Forward or Reverse Blocking Current I , IDRM RRM
(V = Rated V or V , Gate Open) T = 25°C — — 10 AAK DRM RRM J
T = 125°C — — 2 mAJ
(1)*Forward On” Voltage V — — 1.8 VoltsTM
(I = 50 A)TM
*Gate Trigger Current (Continuous dc) T = 25°C I — — 40 mAC GT
(Anode Voltage = 12 Vdc, R = 100 Ohms) T = –40°C — 25 75L C
*Gate Trigger Voltage (Continuous dc) V — 1 1.5 VoltsGT
(Anode V = 100 Ohms, T = –40°C)L C
Gate Non-Trigger Voltage V 0.2 — — VoltsGD
(Anode Voltage = Rated V , R = 100 Ohms, T = 125°C)DRM L J
* Holding Current I — 35 40 mAH
(Anode Voltage = 12 Vdc, T = –40°C)C
* Turn-On Time t — 1.5 2 sgt
(I = 25 A, I = 50 mAdc)TM GT
Turn-Off Time (V = rated voltage) t sDRM q
(I = 25 A, I = 25 A) — 15 —TM R
(I = 25 A, T = 125°C) — 35 —TM R J
Critical Rate of Rise of Off-State Voltage dv/dt — 50 — V/ s
(Gate Open, Rated V , Exponential Waveform)DRM
*Indicates JEDEC Registered Data.
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
FIGURE 1 — AVERAGE CURRENT DERATING FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION
32130
180°
120
24
90° = CONDUCTION ANGLE = CONDUCTION ANGLE dc60°
= 30°110
16
100
T = 125°CJ
8.0 = 30° 60° 90° 180° dc
90
80 0
0 4.0 8.0 12 16 20 0 4.0 8.0 12 16 20
I , ON-STATE FORWARD CURRENT (AMPS) I , AVERAGE ON-STATE FORWARD CURRENT (AMPS)T(AV) T(AV)
2 Motorola Thyristor Device Data
ammaamma
ama
T , MAXIMUM CASE TEMPERATURE ( C) °
C
P , AVERAGE POWER (WATTS)
(AV)FIGURE 3 — MAXIMUM FORWARD VOLTAGE FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT
100 300
1 CYCLE
70
275
50
250
30
125°C
20 225
T = 85°CC
f = 60 Hz25°C
20010
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT7.0
175
1.0 2.0 3.0 4.0 6.0 8.0 105.0
NUMBER OF CYCLES
3.0
FIGURE 5 — CHARACTERISTICS AND SYMBOLS
2.0
+I
1.0
0.7
I FORWARDT
0.5 REVERSE BREAKOVER
BLOCKING POINTVT
REGION IH0.3 IDRM
–V +V
VI DRM0.2 RRMVRRM
FORWARD
BLOCKING
REVERSE
REGION–I0.1 AVALANCHE
REGION0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
v , INSTANTANEOUS VOLTAGE (VOLTS)F

FIGURE 6 — THERMAL RESPONSE
1.0
0.7
0.5
0.3
0.2
Z = R • r(t)JC(t) JC
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k
t, TIME (ms)
3Motorola Thyristor Device Data

qq
r(t), TRANSIENT THERMAL RESISTANCE
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
(NORMALIZED)
I , PEAK SURGE CURRENT (AMP)
TSMTYPICAL TRIGGER CHARACTERISTICS
FIGURE 8 — GATE TRIGGER VOLTAGEFIGURE 7 — GATE TRIGGER CURRENT
50 1.1
40
1.0 OFF-STATE VOLTAGE = 12 VOFF-STATE VOLTAGE = 12 V
30
0.9
20
0.8
0.7
10 0.6
7.0 0.5
5.0 0.4
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
T , JUNCTION TEMPERATURE (°C) T , JUNCTION TEMPERATURE (°C)J J
FIGURE 9 — HOLDING CURRENT
50
40
30
20
10
7.0
5.0
–60 –40 –20 0 20 40 60 80 100 120 140
T , JUNCTION TEMPERATURE (°C)J
4 Motorola Thyristor Device Data


I , GATE TRIGGER CURRENT (mA)
GT
I , HOLDING CURRENT (mA)
H
V , GATE TRIGGER VOLTAGE (VOLTS)
GT

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