Absolute Maximum Ratings Parameter Units

Mkapish1

Description

Niveau: Secondaire, Lycée, Terminale
Absolute Maximum Ratings Parameter Units ID @ VGS =0V, TC = 25°C Continuous Drain Current 12 ID @ VGS = 0V, TC = 100°C Continuous Drain Current 7.75 IDM Pulsed Drain Current ? 48 PD @ TC = 25°C Max. Power Dissipation 150 W Linear Derating Factor 1.2 W/°C VGS Gate-to-Source Voltage ±20 V EAS Single Pulse Avalanche Energy ? 8.0 mJ IAR Avalanche Current ? 12 A EAR Repetitive Avalanche Energy ? - mJ dv/dt Peak Diode Recovery dv/dt ? 3.5 V/ns TJ Operating Junction -55 to 150 TSTG Storage Temperature Range Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) Weight 11.5(typical) g PD - 90330F The HEXFET?technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

• parameter min


• repetitive avalanche


• time —


• voltage rds


• dt capability


• diode forward


• typical output


• maximum effective

Sujets

• Première
• Waveform
• Intrinsic and extrinsic properties

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 29
• Langue: English

Extrait

PD  90330F

REPETITIVE AVALANCHE AND dv/dt RATED IRF450
HEXFET TRANSISTORS JANTX2N6770 THRUHOLE (TO204AA/AE) JANTXV2N6770 500V, NCHANNEL Product Summary  Part Number BVDSS R DS(on) I D  IRF450 500V 0.400 12A

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low onstate resis tance combined with high transconductance; superior re verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Absolute Maximum Ratings Parameter I @ V =0V, T = 25°C Continuous Drain Current CD GS I @ V = 0V, T = 100°C Continuous Drain Current D GS C I Pulsed Drain Current DM ➀ P @ T = 25°C Max. Power Dissipation D C Linear Derating Factor V GatetoSource Voltage GS E Single Pulse Avalanche Energy AS ➁ I Avalanche Current AR ➀ E Repetitive Avalanche Energy AR ➀ dv/dt Peak Diode Recovery dv/dt ➂ T Operating Junction J T Storage Temperature Range STG Lead Temperature Weight

For footnotes refer to the last page

www.irf.com

TO3

Features:  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  Ease of Paralleling

1 2 7.75 4 8 1 5 0 1.2 ±20 8.0 1 2  3.5 55 to 150

300 (0.063 in. (1.6mm) from case for 10s) 11.5(typical)

Units

A

W W/°C V mJ A mJ V/ns

o C

g

1 01/22/01