Semiconductor Components Industries LLC October Rev

Duwayne

Description

Niveau: Secondaire, Lycée, Terminale
? Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 3 1 Publication Order Number: 1N5820/D 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low VF • Low Power Loss/High Efficiency • Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16? from case • Shipped in plastic bags, 500 per bag • Available Tape and Reeled, 1500 per reel, by adding a “RL'' suffix to the part number • Polarity: Cathode indicated by Polarity Band • Marking: 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Please See the Table on the Following Page Device Package Shipping ORDERING INFORMATION AXIAL LEAD CASE 267–03 STYLE 1 SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS Preferred devices are recommended choices for future use and best overall value.

• maximum reference


• non–repetitive peak


• thermal resistance


• dissipation pr


• forward power


• ambient temperature


• axial lead

Sujets

• Première
• Thermal conductivity
• Room temperature

Informations

• Publié par: profil-zyan-2012
• Nombre de lectures: 16
• Langue: English

Extrait

1N5820, 1N5821, 1N5822
1N5820 and 1N5822 are Preferred Devices
Axial Lead Rectifiers
...employing the Schottky Barrier principle in a large area
metal–to–silicon power diode. State–of–the–art geometry features
chrome barrier metal, epitaxial construction with oxide passivation
and metal overlap contact. Ideally suited for use as rectifiers in
low–voltage, high–frequency inverters, free wheeling diodes, and http://onsemi.com
polarity protection diodes.
• Extremely Low V SCHOTTKY BARRIERF
• Low Power Loss/High Efficiency RECTIFIERS
• Low Stored Charge, Majority Carrier Conduction 3.0 AMPERES
Mechanical Characteristics: 20, 30, 40 VOLTS
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
220°C Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 500 per bag
• Available Tape and Reeled, 1500 per reel, by adding a RL’’ suffix to
the part number
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822
AXIAL LEAD
CASE 267–03
STYLE 1MAXIMUM RATINGS
Please See the Table on the Following Page
MARKING DIAGRAM
1N582x
1N582x = Device Code
x = 0, 1 or 2
ORDERING INFORMATION
Device Package Shipping
1N5820 Axial Lead 500 Units/Bag
1N5820RL 1500/Tape & Reel
1N5821 Axial Lead 500 Units/Bag
1N5821RL 1500/Tape & Reel
1N5822 Axial Lead 500 Units/Bag
1N5822RL 1500/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000 1 Publication Order Number:
October, 2000 – Rev. 3 1N5820/D1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage V 20 30 40 VRRM
Working Peak Reverse V VRWM
DC Blocking Voltage VR
Non–Repetitive Peak Reverse Voltage V 24 36 48 VRSM
RMS Reverse Voltage V 14 21 28 VR(RMS)
Average Rectified Forward Current (Note 1.) I 3.0 AO
V 0.2 V , T = 95°CR(equiv) R(dc) L
(R = 28°C/W, P.C. Board Mounting, see Note 5.)JA
Ambient Temperature T 90 85 80 °CA
Rated V , P = 0R(dc) F(AV)
R = 28°C/WJA
Non–Repetitive Peak Surge Current I 80 (for one cycle) AFSM
(Surge applied at rated load conditions, half wave, single phase
60 Hz, T = 75°C)L
Operating and Storage Junction Temperature Range T , T 65 to +125 °CJ stg
(Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied) T 150 °CJ(pk)
*THERMAL CHARACTERISTICS (Note 5.)
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R 28 °C/WJA
*ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 1.)L
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Maximum Instantaneous Forward Voltage (Note 2.) V VF
(i = 1.0 Amp) 0.370 0.380 0.390F
(i = 3.0 Amp) 0.475 0.500 0.525F
(i = 9.4 Amp) 0.850 0.900 0.950F
Maximum Instantaneous Reverse Current i mAR
@ Rated dc Voltage (Note 2.)
T = 25°C 2.0 2.0 2.0L
T = 100°C 20 20 20L
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
*Indicates JEDEC Registered Data for 1N5820–22.
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NOTE 3. — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal use in common rectifier circuits, Table 1. indicates
runaway must be considered when operating this rectifier at suggested factors for an equivalent dc voltage to use for
reverse voltages above 0.1 V . Proper derating may be conservative design, that is:RWM
accomplished by use of equation (1). V = V F (4)R(equiv) (FM)
The factor F is derived by considering the properties of theT = T R P R P (1)A(max) J(max) JA F(AV) JA R(AV)
various rectifier circuits and the reverse characteristics ofwhere T = Maximum allowable ambient temperature
Schottky diodes.T = Maximum allowable junction temperatureJ(max)
(125°C or the temperature at which thermal EXAMPLE: Find T for 1N5821 operated in aA(max)
runaway occurs, whichever is lowest) 12–volt dc supply using a bridge circuit with capacitive filter
P = Average forward power dissipation such that I = 2.0 A (I = 1.0 A), I /I = 10, InputF(AV) DC F(AV) (FM) (AV)
P = Average reverse power dissipation Voltage = 10 V , R = 40°C/W.R(AV) (rms) JA
R = Junction–to–ambient thermal resistanceJA Step 1. Find V Read F = 0.65 from Table 1. ,R(equiv).
Figures 1, 2, and 3 permit easier use of equation (1) by V = (1.41) (10) (0.65) = 9.2 V.R(equiv)
taking reverse power dissipation and thermal runaway into
Step 2. Find T from Figure 2. Read T = 108°CR Rconsideration. The figures solve for a reference temperature
@ V = 9.2 V and R = 40°C/W.as determined by equation (2). R JA
Step 3. Find P from Figure 6. **Read P = 0.85 WT = T R P (2) F(AV) F(AV)R J(max) JA R(AV)
I(FM)Substituting equation (2) into equation (1) yields: @ 10 and I 1.0 A.F(AV)I(AV)
T = T R P (3)A(max) R JA F(AV)
Step 4. Find T from equation (3).A(max)
Inspection of equations (2) and (3) reveals that T is theR T = 108 (0.85) (40) = 74°C.
ambient temperature at which thermal runaway occurs or
**Values given are for the 1N5821. Power is slightly lowerwhere T = 125°C, when forward power is zero. TheJ
for the 1N5820 because of its lower forward voltage, andtransition from one boundary condition to the other is
higher for the 1N5822. Variations will be similar for theevident on the curves of Figures 1, 2, and 3 as a difference
MBR–prefix devices, using P from Figure 6.in the rate of change of the slope in the vicinity of 115°C. The F(AV)
data of Figures 1, 2, and 3 is based upon dc conditions. For
Table 1. Values for Factor F
Full Wave,
Circuit Half Wave Full Wave, Bridge Center Tapped*†
Load Resistive Capacitive* Resistive Capacitive Resistive Capacitive
Sine Wave 0.5 1.3 0.5 0.65 1.0 1.3
Square Wave 0.75 1.5 0.75 0.75 1.5 1.5
*Note that V 2.0 V . †Use line to center tap voltage for V .R(PK) in(PK) in
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125 125
20 15 20
10 15
108.0115 115
8.0
105 105
R ( °C/W) = 70 R ( °C/W) = 70JA JA
50 5095 95
40 40
28 28
85 85
75 75
2.0 3.0 4.0 5.0 7.0 10 15 20 3.0 4.0 5.0 7.0 10 15 20 30
V , REVERSE VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS)R R
Figure 1. Maximum Reference Temperature Figure 2. Maximum Reference Temperature
1N5820 1N5821
40125
20 MAXIMUM35
15 TYPICAL
115
10 30
8.0
25105
20
R ( °C/W) = 70JA95
15
50
10
85 40 BOTH LEADS TO HEAT SINK,
5.028 EQUAL LENGTH
75 0
4.0 5.0 7.0 10 15 20 30 40 0 1/8 2/8 3/8 4/8 5/8 6/8 7/8 1.0
V , REVERSE VOLTAGE (VOLTS) L, LEAD LENGTH (INCHES)R
Figure 3. Maximum Reference Temperature Figure 4. Steady–State Thermal Resistance
1N5822
1.0
The temperature of the lead should be measured using a ther
LEAD LENGTH = 1/4 ″
mocouple placed on the lead as close as possible to the tie point.0.5
The thermal mass connected to the tie point is normally large
0.3 enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once0.2 P Ppk pk DUTY CYCLE = t /tp 1steady-state conditions are achieved. Using the measured val tp PEAK POWER, P , is peak of anpkue of T , the junction temperature may be determined by:L0.1 TIME equivalent square power pulse.T = T + TJ L JL t1
T = P • R [D + (1 - D) • r(t + t ) + r(t ) - r(t )] where:0.05 JL pk JL 1 p p 1
T = the increase in junction temperature above the lead temperature.JL
0.03 r(t) = normalized value of transient thermal resistance at time, t, i.e.:
0.02 r(t + t ) = normalized value of transient thermal resistance at time1 p
t + t , etc.1 p
0.01
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k
t, TIME (ms)
Figure 5. Thermal Response
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DDq
r(t), TRANSIENT THERMAL RESISTANCE T , REFERENCE TEMPERATURE ( C)° T , REFERENCE TEMPERATURE ( C)°
R R
(NORMALIZED)
R , THERMAL RESISTANCE
JL
T , REFERENCE TEMPERATURE ( C)°
R
JUNCTION-TO-LEAD ( C/W) °1N5820, 1N5821, 1N5822
10 NOTE 4. – APPROXIMATE THERMAL CIRCUIT MODEL
7.0
SINE WAVE5.0 R R R R R RL(K) S(K)S(A) L(A) J(A) J(K)I(FM)
3.0 (Resistive Load) T TA(A) A(K)I Pdc D(AV)2.0
T T T T TL(A) C(A) J C(K) L(K)
5.01.0 Capacitive SQUARE WAVE
100.7 Loads 20
0.5
Use of the above model permits junction to lead thermal
0.3 resistance for any mounting configuration to be found. For
T ≈ 125 °CJ0.2 a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
0.1
Terms in the model signify:0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
I , AVERAGE FORWARD CURRENT (AMP) T = Ambient Temperature T = Case TemperatureF(AV) A C
T = Lead T T = Junction TL JFigure 6. Forward Power